The T2G6000528-Q3 is a 10 W GaN on SiC HEMT RF power transistor operating from DC to 6 GHz at 28 V drain voltage, designed for military radar, communications, and test instrumentation applications. It features a flange-mount package with thermal resistance of 12.4 °C/W measured to the bottom of the package, and a maximum channel temperature of 225 °C. The device delivers greater than 17 dB linear gain and 9.7 W output power at 3.3 GHz with 49.7% power-added efficiency under pulsed conditions. It is lead-free, RoHS compliant, and rated for a moisture sensitivity level of 3 at 260 °C with a Class 1A ESD rating per JESD22-A114.
RF JFET Transistors DC-6.0GHz 10 Watt 28V GaN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Transistors |
| Product Number | T2G6000528-Q3 28V |
| Product Name | RF JFET Transistors |
| Transistor Type | JFET |
