The UJ4SC075011B7S is a 750V, 11mΩ normally-off silicon carbide FET in a D2PAK-7L package, designed for high-efficiency switching in EV charging, PV inverters, and motor drives. It combines a SiC JFET with a Si MOSFET in a cascode configuration, enabling standard gate drive compatibility. Maximum junction temperature is 175°C, with a thermal resistance junction-to-case of 0.42°C/W. The device exhibits a gate charge of 75nC, reverse recovery charge of 274nC, and a forward voltage of 1.1V for the body diode. It meets AEC-Q200 qualifications and is RoHS-compliant.
750V/11MOHM, N-OFF SIC STACK CAS
| ODG (Origin Data Global) | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | UJ4SC075011B7S |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel |
| Transistor Technology / Material | SiCFET (Cascode SiCJFET) |
| V(BR)DSS | 750 volts |
| IDSS | 104000 milliamps |
