Qorvo's TGF2957 is a discrete 12.6 mm GaN on SiC HEMT which operates from DC-12 GHz.
The TGF2957 typically provides 48.6 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 69.6 % which makes the TGF2957 appropriate for high efficiency applications.
Lead-free and RoHS compliant.
RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
| Qorvo | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | RF Transistors | Transistors |
| Product Number | TGF2957 | TGF2957 |
| Product Name | DC - 12 GHz, 70 Watt Discrete Power GaN on SiC HEMT | RF JFET Transistors |
| Transistor Technology / Material | GaN on SiC |
