Qorvo Datasheets for Power Amplifiers

Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications.
Power Amplifiers: Learn more

Product Name	Notes
18 - 40 GHz Wideband GaN Solid State Power Amplifier (SSPA) -- QPB1840N	An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium® QPB1840N is a solid state, spatial combining amplifier with an operating range of 18–40 GHz. With its maximum performance...
800 - 2400 MHz, 2 Watt Linear Amplifier -- AP601-F	Qorvo's AP601-F is a high dynamic range power amplifier in a lead-free / RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able...
800 - 2400 MHz, 4 Watt Linear Amplifier -- AP602-F	Qorvo's AP602-F is a high dynamic range power amplifier in a lead-free / RoHS-compliant 5 x 6 mm power DFN SMT package. The single stage amplifier has excellent backoff linearity,...
800 - 2200 MHz, 7 Watt Linear Amplifier -- AP603-F	Qorvo's AP603-F is a high dynamic range power amplifier in a lead-free / RoHS-compliant 5 x 6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while...
8.5 - 10.5 GHz 1 Watt X-Band Power Amplifier -- QPA0812	Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output...
17.7 - 20.2 GHz 10 Watt GaN Power Amplifier -- QPA1722	Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while...
17.3 - 21.2 GHz 20 Watt GaN Power Amplifier -- QPA1724D	Qorvo's QPA1724D is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing...
5.3 - 5.9 GHz 50 Watt GaN Power Amplifier -- QPA2311	Qorvo's QPA2311 is a packaged power amplifier fabricated using Qorvo's production 0.25 um GaN on SiC process (QGaN25). Operating from 5.3 – 5.9 GHz, the QPA2311 produces greater than 47...
2 - 6 GHz MMIC Power Amplifier -- QPA2597	Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of...
8.5 - 10.55 GHz, 60 Watt X-Band GaN Power Amplifier -- QPA2811	Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.55 GHz, the QPA2811 provides 48.9 dBm of...
0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor -- QPD1000	Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and...
DC - 4 GHz, 10 Watt, 50 Volt GaN RF Transistor -- QPD1010	Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features...
DC - 6 GHz, 10 Watt, 28 V GaN RF Power Transistor -- T2G6000528-Q3	Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 6 GHz, 15 Watt, 28 Volt GaN RF Power Transistor -- T2G6001528-SG	Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in...
DC - 25 GHz, 2 Watt, 28 Volt GaN RF Transistor -- TGF2942	Qorvo's TGF2942 is a 2.4 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven...
30 - 1215 MHz, 15 Watt, GaN RF Input-Matched Transistor -- QPD1000A	QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power...
30 - 1200 MHz, 25 Watt, GaN RF Input-Matched Transistor -- QPD1004A	QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power...
30 - 1200 MHz, 7 Watt, GaN RF Input-Matched Transistor -- QPD1011A	QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power...
30 - 1200 MHz, 15 Watt, GaN RF Input-Matched Transistor -- QPD1014A	QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power...
DC - 3.5 GHz, 100 Watt, GaN RF Transistor -- QPD2929L	QPD2929L is a 100W (P3dB), wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an...
30 - 1200 MHz, 25 Watt, 50 Volt GaN RF Input-Matched Transistor -- QPD1004	The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The...
DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor -- QPD1013	The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in...
DC - 1.7 GHz, 500 Watt, 50 Volt, GaN RF Transistor -- QPD1016	The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an...
960 - 1215 MHz, 1800 Watt, 65 Volt, GaN RF Input-Matched Transistor -- QPD1025L	The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board...
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg.Power, 50 Volt, GaN RF Power Transistor -- TGF2819-FL	The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with...
DC - 4.0 GHz, 200 Watt Peak, 40 Watt Avg. Power, 50 Volt, GaN RF Power Transistor -- TGF2819-FS	The Qorvo TGF2819-FS is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with...
DC - 25 GHz, 4 Watt, 28 Volt GaN RF Transistor -- TGF2941	The Qorvo TGF2941 is a 4 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's...
3.1 - 3.5 GHz, 125 Watt, 50 Volt GaN on SiC Power Amplifier -- QPA2513	The QPA2513 is a 2-stage S-Band internally matched GaN Power Amplifier Module. The QPA2513 operates at pulsed RF CW in frequency range 3.1 -3.5 GHz providing typically 51dBm of saturated...
2 - 18 GHz Wideband GaN Solid State Power Amplifier (SSPA) -- QPB0618J	The QPB0618J is a solid state driver amplifier based on GaN MMIC technology, with an operating range of 2 - 18 GHz with a saturated output power of 45 dBm...
DC - 5 GHz, 45 Watt, 48 Volt GaN RF Power Transistor -- QPD0030	The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar...
1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor -- QPD1425	The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and...
1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN on SiC RF Transistor -- QPD1425L	The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and...
1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor -- QPD1426	The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of...
1.2 - 1.4 GHz, 220 W GaN on SiC RF Transistor -- QPD1426L	The QPD1426L is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of...
1.0 - 1.5 GHz, 300 Watt, GaN on SiC RF Transistor -- QPD2560L	The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal...
2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor -- QPD2562L	The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to...

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