Qorvo Datasheets for Power Amplifiers
Power amplifiers deliver a specific amount of AC power to a load. They are used in audio frequency and radio frequency applications.
Power Amplifiers: Learn more
| Product Name | Notes |
|---|---|
| 2 - 18 GHz Wideband GaN Solid State Power Amplifier (SSPA) | |
| 27 - 31 GHz High Power Amplifier | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB0206N is a solid state, spatial combining amplifier with an operating range of 2–6 GHz. With its maximum performance in... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB0220N is a solid state, spatial combining amplifier with an operating range of 2–18 GHz. With its maximum performance in... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB0618N is a solid state, spatial combining amplifier with an operating range of 6–18 GHz. With its maximum performance in... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB1024 is a solid state, spatialcombining amplifier with an operating range of 8.0 – 11.0 GHz while achieving greater than... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB1111 is a solid state, spatialcombining amplifier with an operating range of 34-36 GHz while achieving a minimum of 54... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB1316 is a solid state, spatialcombining amplifier with an operating range of 13.4 – 15.5 GHz while achieving greater than... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB2040N is a solid state, spatial- combining amplifier with an operating range of 18–40 GHz. With its maximum performance in... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB2731N is a solid state, spatial combining amplifier with an operating range of 27.5 - 31 GHz while achieving greater... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPB3238N is a solid state, spatialcombining amplifier with an operating range of 32 - 38 GHz. With its maximum performance... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium™ QPR0220 is an integrated solid state, spatial-combining amplifier and driver amplifier with an operating range of 2–18 GHz while achieving... | |
| An excellent alternative to traveling wave tube amplifiers, Qorvo's Spatium® QPB1840N is a solid state, spatial combining amplifier with an operating range of 18–40 GHz. With its maximum performance... | |
| Qorvo QPA4536 is a K-Band Power Amplifier with integrated power detector. The QPA4536 operates from 24.2 - 26.5 GHz and is designed using Qorvo's power pHEMT production process. The QPA4536... | |
| Qorvo's AP601-F is a high dynamic range power amplifier in a lead-free / RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has 13.5 dB gain, while being able... | |
| Qorvo's AP602-F is a high dynamic range power amplifier in a lead-free / RoHS-compliant 5 x 6 mm power DFN SMT package. The single stage amplifier has excellent backoff linearity,... | |
| Qorvo's AP603-F is a high dynamic range power amplifier in a lead-free / RoHS-compliant 5 x 6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while... | |
| Qorvo's CMD184 is a 4.5 W wideband GaN MMIC power amplifier die which operates from 0.5 to 20 GHz. The amplifier delivers greater than 13 dB of gain with a... | |
| Qorvo's CMD243 is a wideband GaAs MMIC driver amplifier ideally suited for military, space, and communications systems where small size and high linearity are critical design requirements. At 30 GHz... | |
| Qorvo's CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than... | |
| Qorvo's CMD291 is a wideband GaAs MMIC driver amplifier die which operates from 16 to 24 GHz. The broadband device is ideally suited for applications requiring high dynamic range. The... | |
| Qorvo's CMD291P4 is a wideband GaAs MMIC driver amplifier housed in a leadless 4x4 mm surface mount package. The broadband device operates from 16 to 24 GHz and is ideally... | |
| Qorvo's CMD293 is a wideband medium power GaAs MMIC driver amplifier ideally suited for military, space and communications systems where small size and high linearity are needed. At 30 GHz... | |
| Qorvo's QPA0015 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0015 targets the 13.75-14.5 GHz Satcom band while providing 3-Watts... | |
| Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts... | |
| Qorvo's QPA0017 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0017 targets the 13.75-14.5 GHz Satcom band while providing 12.5-Watts... | |
| Qorvo's QPA0506 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 5 – 6 GHz, the QPA0506 typically provides 36 dBm of... | |
| Qorvo's QPA0524 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0524 targets the 24.25-26.5 GHz for 5G and Satcom band. | |
| Qorvo's QPA0708T is a power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15), mounted to a high thermal conductivity tab. Operating between 7.9 and 8.4 GHz, it achieves... | |
| Qorvo's QPA0812 is a packaged, high performance power amplifier fabricated on Qorvo's production QPHT15 (0.15um) pHEMT process. Covering 8.5 - 10.5 GHz, the QPA0812 provides 1 W of saturated output... | |
| Qorvo's QPA1009 is a laminate packaged wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009 provides... | |
| Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30... | |
| Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. | |
| Qorvo's QPA1314D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Operating between 13.75 and 14.5 GHz, it achieves 55 W saturated... | |
| Qorvo's QPA1314T is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15), mounted to a high thermal conductivity tab. Operating between 13.75 and... | |
| Qorvo's QPA1315 is a packaged high power MMIC amplifier, Ku-K band, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1315 is targeted for 15.4 - 17.7 GHz... | |
| Qorvo's QPA1721D is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1721D targets the 17.3 – 21.2 GHz Satcom band providing... | |
| Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while... | |
| Qorvo's QPA1724 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724 targets the 17.3 - 21.2 GHz Satcom band while... | |
| Qorvo's QPA1724D is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing... | |
| Qorvo's QPA1725 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1725 targets the 17.3 – 21.2 GHz Satcom band while... | |
| Qorvo's QPA2040D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 20 and 40 GHz, it achieves saturated output power of 2 W... | |
| Qorvo's QPA2211 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31 GHz, it achieves 5 W linear power with lower... | |
| Qorvo's QPA2211T is a Ka-band power amplifier Die-on-Tab product. Operating between 27.5 and 31 GHz, it achieves 14 W saturated power. Lead-free and RoHS compliant. | |
| Qorvo's QPA2212 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 20 W saturated output power. QPA2212... | |
| Qorvo's QPA2215D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 27.5 to 31.0 GHz, it achieves 2.5 W linear power with lower... | |
| Qorvo's QPA2215T is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15), mounted to a high thermal conductivity tab. Operating from 27.5 to 31.0 GHz, it... | |
| Qorvo's QPA2226D is a high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process (QGaN15). Operating between 34 and 36 GHz, it achieves 20 W saturated power. | |
| Qorvo's QPA2311 is a packaged power amplifier fabricated using Qorvo's production 0.25 um GaN on SiC process (QGaN25). Operating from 5.3 – 5.9 GHz, the QPA2311 produces greater than 47... | |
| Qorvo's QPA2575 is a Ka-band power amplifier fabricated on Qorvo's QPHT15 0.15 um power pHEMT process. The QPA2575 operates from 32 to 38 GHz, providing 3 W of saturated power... | |
| Qorvo's QPA2597 is a packaged driver amplifier using proven GaN on SiC technology. The QPA2597 operates from 2.0 to 6.0GHz and provides 32 dBm of output with 24 dB of... | |
| Qorvo's QPA2610 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.5 GHz, the QPA2610 provides > 2... | |
| Qorvo's QPA2611 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8 - 12 GHz, the QPA2611 provides > 5... | |
| Qorvo's QPA2612 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8 - 12 GHz, the QPA2612 provides > 12... | |
| Qorvo's QPA2640D is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The QPA2640D operates from 20 to 40 GHz, providing 8 W of saturated power. The... | |
| Qorvo's QPA2640T is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process, mounted to a high thermal conductivity tab. The QPA2640T operates from 20 to 40 GHz,... | |
| Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 10.55 GHz, the QPA2811 provides 48.9 dBm of... | |
| Qorvo's QPA2933 is a packaged, high-power S-band amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 - 3.3 GHz, the QPA2933 provides 48.8 dBm of... | |
| Qorvo's QPA2935 is a MMIC power amplifier fabricated using Qorvo's QGaN25 0.25 um GaN on SiC production process. Covering 2.7 - 3.5 GHz, the QPA2935 typically provides 33 dBm of... | |
| Qorvo's QPA2966 is a wideband power amplifier fabricated on Qorvo's QGaN15 GaN on SiC process. The QPA2966 operates from 2 to 18 GHz, providing 20 W of saturated power. QPA2966... | |
| Qorvo's QPA3055P is a packaged, high-power S-band amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.5 GHz, the QPA3055P provides 100 W of... | |
| Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower... | |
| Qorvo's QPA4246D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V... | |
| Qorvo's QPA4346D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V... | |
| Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V... | |
| Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and... | |
| Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features... | |
| Qorvo's QPM1021 is a packaged, high power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process. The QPM1021 operates from 10 – 12 GHz and provides 100 W... | |
| Qorvo's QPM2239 is a packaged, high-power Ku-band amplifier module, fabricated on Qorvo's production 0.25 um GaN on SiC process (QGaN25). Covering 13 - 15.5 GHz, the QPM2239 provides 80 W... | |
| Qorvo's T2G6000528-Q3 is a 10 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in... | |
| Qorvo's T2G6001528-SG is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is in... | |
| Qorvo's TGA2239 is a Ku-band, high power MMIC amplifier fabricated on Qorvo's production 0.15um GaN on SiC process. The TGA2239 operates from 13 - 15.5 GHz and provides a superior... | |
| Qorvo's TGA2753-SM is a C-Band Power Amplifier with integrated power detector. The TGA2753-SM operates from 5.9 - 7.1 GHz and is designed using Qorvo's power GaAs pHEMT and GaN HEMT... | |
| Qorvo's TGF2942 is a 2.4 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's proven... | |
| Qorvo's TGM2635-CP is a packaged X-band, high power MMIC amplifier fabricated on Qorvo's production 0.25um GaN on SiC process. The TGM2635–CP operates from 8 - 11 GHz and provides 100... | |
| QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power... | |
| QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power... | |
| QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power... | |
| QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power... | |
| QPD2929L is a 100W (P3dB), wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an... | |
| The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The... | |
| The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in... | |
| The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an... | |
| The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an... | |
| The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external... | |
| The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board... | |
| The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external... | |
| The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external... | |
| The Qorvo QPD1034 is a 1700W (P3dB) GaN pallet which operates from 0.96 to 1.215 GHz. Fully matched to 50 Ohms, it is easy to use, and provides ease of... | |
| The Qorvo TGF2819-FL is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with... | |
| The Qorvo TGF2819-FS is a greater-than 200 W Peak (40 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 4.0 GHz. The device is constructed with... | |
| The Qorvo TGF2941 is a 4 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo's... | |
| The QPA0004 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band. In S-Band, it provides 9W saturated power over the 3.1 to 3.5GHz frequency range. In... | |
| The QPA0007 is a reconfigurable dual-band MMIC power amplifier operating in both S-Band and X-Band. In S-Band, it provides 32 W saturated power over the 3.1 to 3.5 GHz frequency... | |
| The QPA2513 is a 2-stage S-Band internally matched GaN Power Amplifier Module. The QPA2513 operates at pulsed RF CW in frequency range 3.1 -3.5 GHz providing typically 51dBm of saturated... | |
| The QPA3325 is a Power Doubler amplifier SMD Module. The part employs GaAs pHemt and GaN Hemt die and is operated from 45 MHz to 1218 MHz. It provides excellent... | |
| The QPA3810 is an integrated 2-stage Power Amplifier Module designed for massive MIMO applications with 8 W RMS at the device output covering frequency range from 3.4 to 3.8 GHz. | |
| The QPA9901 is a high-efficiency, fully input and output matched linearizable power amplifier in RoHS compliant surface mount package. This InGaP/GaAs HBT device delivers high performance across wideband frequencies with... | |
| The QPA9907 is a high-efficiency, linearizable power amplifier targeting small-cell wireless infrastructure systems. Using InGaP/GaAs HBT technology, the product delivers high efficiency of 29.5% at +28dBm average output power while... | |
| The QPA9909 is a high-efficiency, linearizable power amplifier targeting 758 MHz – 798 MHz small-cell wireless infrastructure systems. The product delivers high efficiency of 37.7 % at +29dBm average output... | |
| The QPA9940 is a high-efficiency, linearizable power amplifier targeting Band 40 small-cell wireless infrastructure systems. Using InGaP/GaAs HBT technology, the product delivers high efficiency of 31% at +28dBm average output... | |
| The QPA9942 is a high-efficiency, linearizable power amplifier targeting Band 42 small-cell wireless infrastructure systems. Using InGaP/GaAs HBT technology, the product delivers high efficiency of 26% at +28dBm average output... | |
| The QPB0220J is a solid state driver amplifier based on GaN MMIC technology, with an operating range of 2 – 18 GHz with a saturated output power of 39 -... | |
| The QPB0618J is a solid state driver amplifier based on GaN MMIC technology, with an operating range of 2 - 18 GHz with a saturated output power of 45 dBm... | |
| The QPB3238J is a solid state driver amplifier with an operating range of 32 - 38 GHz while achieving 42 dBm (15 Watts) of saturated output power. Its compact size... | |
| The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar... | |
| The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN... | |
| The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and... | |
| The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and... | |
| The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is... | |
| The QPD1035L is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is... | |
| The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and... | |
| The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and... | |
| The QPD1426 is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of... | |
| The QPD1426L is a 220 W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 53.5 dBm of saturated output power with 17 dB of... | |
| The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal... | |
| The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to... |