Qorvo 2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor QPD2562L

Description
The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.
  • 2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor - QPD2562L - Qorvo
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Description
The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.
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2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor - QPD2562L - Qorvo
Qorvo
Greensboro, NC, United States
2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor
QPD2562L
2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor QPD2562L
The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.

The QPD2562L is a 200 W - 300 W discrete GaN on SiC HEMT which operates from 2.5 to 2.9 GHz and 2.9 to 3.3 GHz providing typically up to 55.4 dBm / 53 dBm respectively, of saturated output power with 13 dB of large-signal gain and 50% / 45% respectively, of drain efficiency.

Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPD2562L
Product Name 2.5 - 3.5 GHz, 200 W GaN on SiC RF Transistor
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