Qorvo 37.5 - 42.5 GHz 4 Watt GaN Amplifier QPA4446D

Description
Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency. To simplify system integration, the QPA4446D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. Its RF input port is DC coupled to ground for optimum ESD performance. The QPA4446D is ideal for supporting communications and radar applications in both commercial and military markets. The QPA4446D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.
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Description
Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency. To simplify system integration, the QPA4446D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. Its RF input port is DC coupled to ground for optimum ESD performance. The QPA4446D is ideal for supporting communications and radar applications in both commercial and military markets. The QPA4446D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.
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37.5 - 42.5 GHz 4 Watt GaN Amplifier - QPA4446D - Qorvo
Greensboro, NC, United States
37.5 - 42.5 GHz 4 Watt GaN Amplifier
QPA4446D
37.5 - 42.5 GHz 4 Watt GaN Amplifier QPA4446D
Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency. To simplify system integration, the QPA4446D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. Its RF input port is DC coupled to ground for optimum ESD performance. The QPA4446D is ideal for supporting communications and radar applications in both commercial and military markets. The QPA4446D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant.

Qorvo's QPA4446D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). It is targeted to the 37.5 - 42.5 GHz Satcom Q-V band. QPA4446D achieves 2 W linear power with 25 dBc third order intermodulation distortion products, and 18 dB small signal gain. It provides 4 W of saturated output power while achieving 25% power-added efficiency.
To simplify system integration, the QPA4446D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. Its RF input port is DC coupled to ground for optimum ESD performance.
The QPA4446D is ideal for supporting communications and radar applications in both commercial and military markets.
The QPA4446D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.

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Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPA4446D
Product Name 37.5 - 42.5 GHz 4 Watt GaN Amplifier
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