Qorvo 1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor QPD1425

Description
The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.
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Description
The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.
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1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor - QPD1425 - Qorvo
Greensboro, NC, United States
1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor
QPD1425
1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor QPD1425
The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations. Evaluation boards are available upon request.

The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.
Input pre-match within the package results in ease of external board match and saves board space. The device is housed in an industry standard air cavity package and is ideally suited for Radar applications. The device can support both CW and pulsed operations.
Evaluation boards are available upon request.

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Technical Specifications

  Qorvo
Product Category Power Amplifiers
Product Number QPD1425
Product Name 1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor
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