Qorvo Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

Product Name	Notes
QPD1000 QPD1004SR QPD1017 QPD1018 QPD1019 SHF-0189 UF3C065030B3 UF3C065030K3S UF3C065030K4S UF3C065030T3S UF3C065040B3 UF3C065040K3S UF3C065040K4S UF3C065040T3S UF3C065080B3 UF3C065080B7S UF3C065080K3S UF3C065080K4S UF3C065080T3S UF3C120040K3S UF3C120040K4S UF3C120080B7S UF3C120080K3S UF3C120080K4S UF3C120150B7S UF3C120150K3S UF3C120150K4S UF3C120400K3S UF3C170400K3S UF3SC065007K4S UF3SC065030B7S UF3SC065030D8S UF3SC065040B7S UF3SC065040D8S UF3SC120009K4S UF3SC120016K3S UF3SC120016K4S UF3SC120040B7S UJ3C065030B3 UJ3C065030K3S UJ3C065030T3S UJ3C065080B3 UJ3C065080K3S UJ3C065080T3S UJ3C120040K3S UJ3C120070K3S UJ3C120080K3S UJ3C120150K3S UJ4C075018K3S UJ4C075018K4S UJ4C075023K3S UJ4C075023K4S UJ4C075023L8S UJ4C075033K3S UJ4C075033K4S UJ4C075044K3S UJ4C075044K4S UJ4C075060K3S UJ4C075060K4S UJ4SC075006K4S UJ4SC075009K4S UJ4SC075011B7S UJ4SC075011K4S UJ4SC075018L8S
DC - 3.5 GHz, 55 Watt, 28 V GaN RF Power Transistor -- T2G4005528-FS	Qorvo's T2G4005528-FS is a 55 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FL	Qorvo's T2G6003028-FL is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 6 GHz, 30 Watt, 28 V GaN RF Power Transistor -- T2G6003028-FS	Qorvo's T2G6003028-FS is a 30 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 6 GHz and a 28V supply rail. The device is...
DC - 18 GHz, 25 Watt Discrete Power GaN on SiC HEMT -- TGF2023-2-05	Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power...
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor -- TGF2929-FL	Qorvo's TGF2929-FL is a 100 W (P3dB) wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is...
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM	Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and...
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM	Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and...
DC - 4 GHz, 15 Watt, 50 Volt GaN RF Transistor -- QPD1009	The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which...
DC - 2.7 GHz, 150 Watt, 65 Volt GaN RF Transistor -- QPD1013	The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in...

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