The QPD1018 is a 500 W GaN on SiC HEMT RF transistor designed for operation from 2.7 to 3.1 GHz at a 50 V supply, intended for military and civilian radar systems. It is packaged in an industry-standard air cavity measuring 17.40 x 24.00 x 4.31 mm, with an internal 50 Ω match and pulse capability. At 2.9 GHz, it delivers 575 W output power at 3 dB compression, 17.7 dB linear gain, and 67.9% power-added efficiency. The device operates with a drain bias current of 750 mA under pulsed conditions and features low thermal resistance. It is RoHS compliant and rated for an operating temperature range of −40°C to +85°C.
GaN FETs 2.7-3.1 GHz, 500W,50V,GaN RF IMFET Product overview: QPD1018 from Qorvo is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.1 GHz, 500W, 50V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 3.1 GHz, 500W, 50V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-QPD1018 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-QPD1018 |
| Product Name | 3.1 GHz 500W 50V MOSFET Transistor |
| Polarity | N-Channel |
