Wafer World, Inc. Datasheets for Semiconducting Materials
Semiconductors (metalloids) or semiconductor materials are used to fabricate microelectronic and optoelectronic devices such as transistors, photodetectors or solar cells.
Semiconducting Materials: Learn more
| Product Name | Notes |
|---|---|
| Characteristics Materials: Clean Room Diameter: 100.0 Dopant: Shipping Cassette Thickness-actual: Holds 25 Wafers Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 100.0 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 125.0 Dopant: Shipping Cassette Thickness-actual: Holds 25 Wafers Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 125.0 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 150.0 Dopant: Shipping Cassette Thickness-actual: Holds 25 Wafers Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 150.0 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 25.4 Dopant: Shipping Cassette Thickness-actual: Holds 25 Wafers Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 25.4 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 38.1 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 50.8 Dopant: Shipping Cassette Thickness-actual: Holds 25 Wafers Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 50.8 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 76.2 Dopant: Shipping Cassette Thickness-actual: Holds 25 Wafers Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: Clean Room Diameter: 76.2 Type: Round Dopant: Single Wafer Shipper Orientation: lid/base/spring Thickness-actual: Holds 1 Wafer Grade: Clean Room Misc Info. Growth Method: ePak Lot Size: 10 | |
| Characteristics Materials: GaAs Diameter: 100.0 Type: P Dopant: Zn Orientation: (100) 2ø TOWARD (110) Resistivity-Actual: .02-.003 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25... | |
| Characteristics Materials: GaAs Diameter: 100.0 Type: P Dopant: Zn Orientation: (100) 2ø TOWARD (110) Resistivity-Actual: .02-.003 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 5... | |
| Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 575-625 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 25 | |
| Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 575-625 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5 | |
| Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25 | |
| Characteristics Materials: GaAs Diameter: 150.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 600-650 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5 | |
| Characteristics Materials: GaAs Diameter: 150.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: >1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25 | |
| Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100) Resistivity-Actual: 4E18 Thickness-actual: 250-300 Surface: P/E Grade: Test Misc Info. Growth Method: VGF Lot Size: 5 | |
| Characteristics Materials: GaAs Diameter: 50.8 Type: N Dopant: SI Orientation: (100-15ø) tow (111)A Resistivity-Actual: 4E18 Thickness-actual: 275¤25 Surface: P/E Grade: EPI Misc Info. Growth Method: VGF Lot Size: 5 | |
| Characteristics Materials: GaAs Diameter: 76.2 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25 | |
| Characteristics Materials: Germanium Diameter: 100.0 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 100.0 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 500-550 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 100.0 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 100.0 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 500-550 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 100.0 Type: N Dopant: Sb Orientation: (100)-9 Resistivity-Actual: < .4 Thickness-actual: 150-200 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 100.0 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 450-500 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 100.0 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 500-550 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 25.4 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: 5-40 Thickness-actual: 225-275 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Germanium Diameter: 50.8 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 300-350 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 50.8 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 50.8 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 300-350 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 50.8 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 50.8 Type: N Dopant: Sb Orientation: (100)off 6-9 tow <111> Resistivity-Actual: .01-.04 Thickness-actual: 150-200 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1... | |
| Characteristics Materials: Germanium Diameter: 50.8 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 300-350 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 50.8 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 50.8 Type: P Dopant: Ga Orientation: (111)-3 Resistivity-Actual: .01-.04 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Dopant: Undoped Orientation: (100) Resistivity-Actual: >40 Thickness-actual: 300-350 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 300-350 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Type: N Dopant: Sb Orientation: (100)-6 Resistivity-Actual: .01-.04 Thickness-actual: 100-200 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 300-350 Surface: P/P Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Germanium Diameter: 76.2 Type: P Dopant: Ga Orientation: (100) Resistivity-Actual: .01-.04 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Other Diameter: 50.8 Type: C-AXIS Orientation: (0001) Thickness-actual: 300-350 Surface: P/E Grade: EPI Misc Info. Growth Method: HEM Lot Size: 25 | |
| Characteristics Materials: Other Diameter: 50.8 Type: C-AXIS Orientation: (0001) Thickness-actual: 300-350 Surface: P/E Grade: EPI Misc Info. Growth Method: HEM Lot Size: 5 | |
| Characteristics Materials: Silicon Diameter: 100.0 Dopant: ANY Orientation: ANY Resistivity-Actual: any Thickness-actual: 350-600 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Antimony Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Arsenic Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 375-425 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Arsenic Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 425-475 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Arsenic Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: As Orientation: (111) -4 Resistivity-Actual: .001-.005 Thickness-actual: 425-475 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >10 Thickness-actual: 9900-10100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 450-500 Surface: P/P Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 500-550 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: <1 Thickness-actual: 400-450 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 180-200 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 375-425 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 5900-6100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 11300-11500 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 400-450 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 450-500 Surface: P/P Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 500-550 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: <1 Thickness-actual: 400-500 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 180-200 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 375-425 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-50 Thickness-actual: 400-450 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 400-450 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Dopant: ANY Orientation: ANY Resistivity-Actual: ANY Thickness-actual: 400-500 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 475-525 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 550-600 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-50 Thickness-actual: 500-600 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-50 Thickness-actual: 600-650 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 475-525 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 550-600 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-50 Thickness-actual: 500-600 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-50 Thickness-actual: 600-650 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 125.0 Type: P Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 180-200 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: ANY Dopant: ANY Orientation: ANY Resistivity-Actual: ANY Thickness-actual: 400-600 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-100 Thickness-actual: 500-550 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-100 Thickness-actual: 500-600 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 180-200 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 650-700 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-100 Thickness-actual: 500-550 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-100 Thickness-actual: 500-600 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 180-200 Surface: P/P Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 650-700 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 200.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 700-750 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 200.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-100 Thickness-actual: 600-800 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 200.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 700-750 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Dopant: ANY Orientation: ANY Resistivity-Actual: any Thickness-actual: 4900-5100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Dopant: ANY Orientation: ANY Resistivity-Actual: any Thickness-actual: 800-1000 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Dopant: Boron Orientation: (111) OFF 4° TOWARDS (110) Resistivity-Actual: .001-.005 Thickness-actual: 300-350 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: ANY Dopant: ANY Orientation: ANY Resistivity-Actual: ANY Thickness-actual: 200-500 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: As Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 225-275 Surface: P/P Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 250-300 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 1000-1050 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 2900-3100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 4900-5100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 5900-6100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 5900-6100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 5 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) OFF 2° TOWARDS (110) Resistivity-Actual: 2K-5K Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: FZ Lot Size:... | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 2900-3100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 2900-3100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 4950-5050 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 5 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 5900-6100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 5950-6050 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 7 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 150-200 Thickness-actual: 9900-10100 Surface: P/E Grade: Prime Misc Info. Growth Method: FZ Lot Size: 9 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 2K-5K Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 250-300 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: ANY Orientation: ANY Resistivity-Actual: ANY Thickness-actual: 2400-2600 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: ANY Orientation: ANY Resistivity-Actual: ANY Thickness-actual: 2400-2600 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: ANY Orientation: ANY Resistivity-Actual: any Thickness-actual: 4900-5100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: ANY Orientation: ANY Resistivity-Actual: any Thickness-actual: 4900-5100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 5 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 225-275 Surface: P/P Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25Wafer World, Inc. is... | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 1000-1050 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 950-1000 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) ± 1° Resistivity-Actual: .001-.005 Thickness-actual: 300-350 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) OFF 4° TOWARDS (110) Resistivity-Actual: .005-.02 Thickness-actual: 275-325 Surface: P/E Grade: PRIME Misc Info. Growth Method: CZ Lot Size:... | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: PRIME Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 250-300 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 50.8 Type: P Dopant: Boron Orientation: ANY Resistivity-Actual: ANY Thickness-actual: 2400-2600 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 5 | |
| Characteristics Materials: Silicon Diameter: 76.2 Dopant: ANY Orientation: ANY Resistivity-Actual: any Thickness-actual: 250-500 Surface: P/E Grade: Test Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Arsenic Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 300-350 Surface: P/P Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 350-400 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 1000-1050 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 5 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 2900-3100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 2900-3100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 4900-5100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 8 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 5900-6100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 950-1000 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 9900-10100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 11900-12100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 4 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 1975-2025 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 2900-3100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 4900-5100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 5900-6100 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 10 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: N Dopant: Sb Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 300-350 Surface: P/P Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 350-400 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .001-.005 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: .005-.02 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 1000-1050 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 140-160 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 40-60 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 450-500 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 80-100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 950-1000 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: > 50 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: > 50 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 300-350 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Boron Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 | |
| Characteristics Materials: Silicon Diameter: 76.2 Type: P Dopant: Gallium Orientation: (100) Resistivity-Actual: .6-.83 Thickness-actual: 350-400 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25 |