Wafer World, Inc. 3516

Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: As Orientation: (111) -4 Resistivity-Actual: .001-.005 Thickness-actual: 425-475 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: As Orientation: (111) -4 Resistivity-Actual: .001-.005 Thickness-actual: 425-475 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Suppliers

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Product
Description
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 - 3516 - Wafer World, Inc.
West Palm Beach, FL, USA
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: As Orientation: (111) -4 Resistivity-Actual: .001-.005 Thickness-actual: 425-475 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: As Orientation: (111) -4 Resistivity-Actual: .001-.005 Thickness-actual: 425-475 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 3516
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