Wafer World, Inc. 1243

Description
Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25
Description
Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25

Suppliers

Company
Product
Description
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 - 1243 - Wafer World, Inc.
West Palm Beach, FL, USA
Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25

Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 610-660 Surface: P/P Grade: EPI Misc Info. Growth Method: VGF Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1243
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