Wafer World, Inc. 1203

Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 400-450 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
  • 1203 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 400-450 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Suppliers

Company
Product
Description
Supplier Links
- 1203 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1203
1203
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 400-450 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (111) Resistivity-Actual: 1-20 Thickness-actual: 400-450 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Supplier's Site

Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1203
Unlock Full Specs
to access all available technical data

Similar Products