Wafer World, Inc. 3166

Description
Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1
  • 3166 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1

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Product
Description
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- 3166 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
3166
3166
Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1

Characteristics Materials: Silicon Diameter: 125.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 10-30 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 1

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 3166
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