Wafer World, Inc. 3522

Description
Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 500-550 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25
  • 3522 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 500-550 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25

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Product
Description
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- 3522 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
3522
3522
Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 500-550 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: >3000 Thickness-actual: 500-550 Surface: P/E Grade: PRIME Misc Info. Growth Method: FZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 3522
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