Wafer World, Inc. 1200

Description
Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
  • 1200 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

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Product
Description
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- 1200 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1200
1200
Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 100.0 Type: P Dopant: Boron Orientation: (110) Resistivity-Actual: 1-20 Thickness-actual: 500-550 Surface: P/E Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1200
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