Wafer World, Inc. 1156

Description
Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
  • 1156 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Suppliers

Company
Product
Description
Supplier Links
- 1156 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1156
1156
Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 25.4 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 225-275 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1156
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