Wafer World, Inc. 1361

Description
Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 575-625 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5
  • 1361 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 575-625 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

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Product
Description
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- 1361 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1361
1361
Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 575-625 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

Characteristics Materials: GaAs Diameter: 100.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 575-625 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1361
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