Wafer World, Inc. 1365

Description
Characteristics Materials: GaAs Diameter: 150.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 600-650 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5
  • 1365 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: GaAs Diameter: 150.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 600-650 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

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Product
Description
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- 1365 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
1365
1365
Characteristics Materials: GaAs Diameter: 150.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 600-650 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

Characteristics Materials: GaAs Diameter: 150.0 Type: SI Dopant: Undoped Orientation: (100) Resistivity-Actual: > 1E7 Thickness-actual: 600-650 Surface: P/P Grade: Test Misc Info. Growth Method: VGF Lot Size: 5

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 1365
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