Wafer World, Inc. 4026

Description
Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 650-700 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25
  • 4026 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 650-700 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Suppliers

Company
Product
Description
Supplier Links
- 4026 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
4026
4026
Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 650-700 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Characteristics Materials: Silicon Diameter: 150.0 Type: P Dopant: Boron Orientation: (100) Resistivity-Actual: 1-20 Thickness-actual: 650-700 Surface: P/E/OX Grade: Prime Misc Info. Growth Method: CZ Lot Size: 25

Supplier's Site

Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 4026
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