Wafer World, Inc. 2513

Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >10 Thickness-actual: 9900-10100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3
  • 2513 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >10 Thickness-actual: 9900-10100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3

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Product
Description
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- 2513 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
2513
2513
Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >10 Thickness-actual: 9900-10100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3

Characteristics Materials: Silicon Diameter: 100.0 Type: N Dopant: Phos Orientation: (100) Resistivity-Actual: >10 Thickness-actual: 9900-10100 Surface: P/P Grade: Prime Misc Info. Growth Method: CZ Lot Size: 3

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 2513
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