Wafer World, Inc. 2150

Description
Characteristics Materials: Germanium Diameter: 50.8 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1
  • 2150 - Wafer World, Inc.
    Wafer World, Inc.
Description
Characteristics Materials: Germanium Diameter: 50.8 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1

Suppliers

Company
Product
Description
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- 2150 - Wafer World, Inc.
Wafer World, Inc.
West Palm Beach, FL, USA
2150
2150
Characteristics Materials: Germanium Diameter: 50.8 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1

Characteristics Materials: Germanium Diameter: 50.8 Dopant: Undoped Orientation: (100) Resistivity-Actual: > 40 Thickness-actual: 350-400 Surface: P/E Grade: EPI Misc Info. Growth Method: CZ Lot Size: 1

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Technical Specifications

  Wafer World, Inc.
Product Category Semiconducting Materials
Product Number 2150
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