Insulated Gate Bipolar Transistors (IGBT) Datasheets

Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
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Insulated Gate Bipolar Transistors (IGBT) Datasheets From:
Headquarters
Allen-Bradley / Rockwell Automation
United States
DigiKey
United States
ODG (Origin Data Global)
China
RS Components, Ltd.
United Kingdom
Win Source Electronics
United States
LIXINC Electronics Co., Limited
China
TE Connectivity
United States
Acme Chip Technology Co., Limited
China
LCSC Electronics Technology (HK) Limited
China
Radwell International
United States
ROHM Semiconductor GmbH
Germany
Shenzhen Shengyu Electronics Technology Limited
China
Solid State Devices, Inc.
La Mirada, CA
Toshiba America, Inc.
New York, NY
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
ABB AB
Switzerland
Allied Electronics, Inc.
Fort Worth, TX
Cosel U.S.A., Inc.
United States
Cypress Semiconductor Corp.
United States
Danfoss Inc.
Canada
Dynex Semiconductor
United Kingdom
Eaton Corporation
Cleveland, OH
Fuji Electric Global
Japan
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
Hangzhou Silan Microelectronics Co., Ltd.
China
IXYS Integrated Circuits Division
United States
KYOCERA AVX Components Corporation
Fountain Inn, SC
NCEPOWER 
China
Opto 22
Temecula, CA
ROHM Co., Ltd.
Japan
ShenZhen SlkorMicro Semicon Co., Ltd.
China
Shenzhen SPTECH Micro-electronics Co., Ltd.
China
Siemens AG
Germany
Siemens Analytical Products
United States
StarPower Europe AG
Switzerland
STMicroelectronics, Inc.
United States
TE Connectivity ™
Berwyn, PA
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
Vishay Precision Group
United States
Xilinx, Inc.
United States
Zebra Technologies Corporation
Vernon Hills, IL
Zilog
United States