Karl Kruse GmbH & Co. KG Datasheets for Insulated Gate Bipolar Transistors (IGBT)
Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching).
Insulated Gate Bipolar Transistors (IGBT): Learn more
10 A, 1200 V, N-CHANNEL IGBT -- GT10Q301
30 A, 600 V, N-CHANNEL IGBT -- GT30J322
67 A, 1200 V, N-CHANNEL IGBT, TO-247AD -- APT25GN120B
IGBT 600V 80A 333W TO247-3 -- IKW50N60T
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