Photodiodes:
Photodiodes are used for the detection of optical power (UV, Visible, and IR) and for the conversion of optical power to electrical power.
Photodiodes: Learn more
| Product Name | Notes |
|---|---|
| P11120-201 | 5 μm band, high-speed response, high sensitivity, high reliability, TE-cooled infrared detector with no liquid nitrogen required |
| P11120-901 | 5 μm band, high-speed response, high sensitivity, high reliability |
|
C5460
C5460-01 |
APD Module |
| G9230-01 | Back thinned InGaAs PIN photodiode on a miniature ceramic substrate (2mm x 2mm x 1mm) with a 1mm active area and no bonding wire. Spectral response range of 0.9um to... |
| C5658 | Detects optical signals at 1 GHz, with high sensitivity |
| C9004 | Driver circuit for 16-element photodiode array for S4111-16 series, S5668 series (not included) |
| G6854-01 | Easy optical axis alignment, high fiber coupling efficiency, spherical lens w/ AR coating. For Optical Fiber Communications applications. |
| P4631-02 | Easy-to-use detector module with built-in preamp for InAs (active area: 1 mm dia.) |
| P4631-03 | Easy-to-use detector module with built-in preamp for InSb |
|
P4631
P4631-04 P4631-10 |
Easy-to-use detector module with built-in preamp for MCT |
| P4638 | Easy-to-use detector module with built-in preamp for PbS |
| P4639 | Easy-to-use detector module with built-in preamp for PbSe |
| C9331 | Evaluation circuit board specifically designed for Hamamatsu color sensors. Color sensors that mount on C9331:S7505-01, S9032-02, S8751 |
| C9303-04 | For RGB-LED backlight monitoring for TFT-LCD, built-in RGB solor sensor (S9032-02), high gain type |
| C9303-03 | For RGB-LED backlight monitoring for TFT-LCD, built-in RGB solor sensor (S9032-02) |
| G12072-54 | GaAs PIN photodiode with preamp, 10 Gbps. |
|
G1115
G1116 G1117 G1118 G1120 G1126-02 G1127-02 G1735 G1736 G1737 G1738 G1740 G1746 G1747 G1961 G1962 G1963 G2119 G2711-01 G3067 G3297 G5645 G5842 G6262 |
GaAsP,GaP |
|
P9696-02
P9696-03 |
High sensitivity detectors capable of detecting up to 4.8 um |
| P9696-102 | High sensitivity detectors capable of detecting up to 5.1 um |
|
G8376-03
G8376-05 |
High speed response, low noise, high sensitivity, low terminal capacitance. For NIR photometry and Optical Communications applications. |
|
G8605-11
G8605-12 G8605-13 G8605-15 |
High speed response, low noise, high sensitivity, one stage thermoelectrically cooled. For Optical power meter, water content analyzer, and general photometry applications. |
|
G8605-21
G8605-22 G8605-23 G8605-25 |
High speed response, low noise, high sensitivity, two stage thermoelectrically cooled. For Optical power meter, water content analyzer, and general photometry applications. |
| M6017 | High-voltage power supply module that generates a high voltage (DC voltage) necessary to operate an APD with an adequate gain |
| P7163 | InAs |
|
InGaAs PIN photodiode -- G12183-130K
InGaAs PIN photodiode -- G12183-203K InGaAs PIN photodiode -- G12183-205K InGaAs PIN photodiode -- G12183-210K InGaAs PIN photodiode -- G12183-220K InGaAs PIN photodiode -- G12183-230K |
Infrared detectors (Technical information) [0.3MB/PDF] |
| G8931-20 | InGaAs APD |
| G6742-01 | InGaAs PIN photodiode on a ceramic substrate (4mm x 4mm x 2mm) with a 1mm active area. Spectral response range of 0.9um to 1.7um and a photosensitivity of 0.95 A/W... |
| G6742-003 | InGaAs PIN photodiode on a ceramic substrate (4mm x 4mm x 4mm) with a 0.3mm active area. Spectral response range of 0.9um to 1.7um and a photosensitivity of 0.95 A/W... |
| G8941-03 | InGaAs PIN photodiode on a miniature ceramic substrate (2mm x 2mm x 1mm) with a 0.3mm active area. Spectral response range of 0.9um to 1.7um and a photosensitivity of 0.95... |
| G8941-02 | InGaAs PIN photodiode on a miniature ceramic substrate (2mm x 2mm x 1mm) with a 0.5mm active area. Spectral response range of 0.9um to 1.7um and a photosensitivity of 0.95... |
| G8941-01 | InGaAs PIN photodiode on a miniature ceramic substrate (2mm x 2mm x 1mm) with a 1mm active area. Spectral response range of 0.9um to 1.7um and a photosensitivity of 0.95... |
| G9822-12 | InGaAs PIN photodiode with preamp, 2.5 Gbps, FC pigtail-coaxial mount, for 1.3/1.55 um, optical fiber communications, high speed, high gain |
| G9822-11 | InGaAs PIN photodiode with preamp, 2.5 Gbps, SC pigtail-coaxial mount, for 1.3/1.55 um, optical fiber communications, high speed, high gain |
| G9821-22 | InGaAs PIN photodiode with preamp, 2.5Gbps, FC receptacle-board mount, for 1.31/1.55µm, optical fiber communications, SDH/SONET |
| G9821-32 | InGaAs PIN photodiode with preamp, 2.5Gbps, FC receptacle-panel mount, for 1.31/1.55µm, optical fiber communications, SDH/SONET |
| G9821-21 | InGaAs PIN photodiode with preamp, 2.5Gbps, SC receptacle-board mount, for 1.31/1.55µm, optical fiber communications, SDH/SONET |
| G9820 | InGaAs PIN photodiode with preamp, 2.5Gbps, TO-46 flat window, for 1.31/1.55µm, optical fiber communications, SDH/SONET |
| G9820-02 | InGaAs PIN photodiode with preamp, 2.5Gbps, TO-46 with lens, for 1.31/1.55µm, optical fiber communications, SDH/SONET |
| G8195-12 | InGaAs PIN photodiode, 2GHz, FC pigtail-coaxial mouint, for 1.31/1.55µm, optical fiber communications, high speed, low dark current |
| G9801-22 | InGaAs PIN photodiode, 2GHz, FC receptacle-board mount, for 1.31/1.55µm, optical fiber communications, high speed, low dark current |
| G9801-32 | InGaAs PIN photodiode, 2GHz, FC receptacle-panel mount, for 1.31/1.55µm, optical fiber communications, high speed, low dark current |
| G8195-11 | InGaAs PIN photodiode, 2GHz, SC pigtail-coaxial mouint, for 1.31/1.55µm, optical fiber communications, high speed, low dark current |
| G9801-21 | InGaAs PIN photodiode, 2GHz, SC receptacle-board mount, for 1.31/1.55µm, optical fiber communications, high speed, low dark current |
|
P4247-16
P4247-44 P5968-060 P5968-100 P5968-200 P5968-300 P6606-110 P6606-210 P6606-305 P6606-310 P6606-320 P7751-01 P7751-02 |
InSb |
| C4777 | Integrated module using Ø 0.5 mm APD with built-in temperature control circuit |
| C4777-01 | Integrated module using Ø 3 mm APD |
| C10439-03 | Integrating a Si photodiode (active area: 10 x 10 mm) for precision photometry with low-noise amplifier |
| C10439-01 | Integrating a Si photodiode (active area: 2.4 x 2.4 mm) for precision photometry with low-noise amplifier |
| C10439-02 | Integrating a Si photodiode (active area: 5.8 x 5.8 mm) for precision photometry with low-noise amplifier |
| InGaAs PIN photodiode -- G12181-203K | Long wavelength type (cutoff wavelength: 1.85 µm) Features - Cutoff wavelength: 1.85 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-205K | Long wavelength type (cutoff wavelength: 1.85 µm) Features - Cutoff wavelength: 1.85 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-210K | Long wavelength type (cutoff wavelength: 1.85 µm) Features - Cutoff wavelength: 1.85 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-220K | Long wavelength type (cutoff wavelength: 1.85 µm) Features - Cutoff wavelength: 1.85 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-230K | Long wavelength type (cutoff wavelength: 1.85 µm) Features - Cutoff wavelength: 1.85 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-103K | Long wavelength type (cutoff wavelength: 1.87 µm) Features - Cutoff wavelength: 1.87 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-105K | Long wavelength type (cutoff wavelength: 1.87 µm) Features - Cutoff wavelength: 1.87 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-110K | Long wavelength type (cutoff wavelength: 1.87 µm) Features - Cutoff wavelength: 1.87 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-120K | Long wavelength type (cutoff wavelength: 1.87 µm) Features - Cutoff wavelength: 1.87 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-130K | Long wavelength type (cutoff wavelength: 1.87 µm) Features - Cutoff wavelength: 1.87 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12181-003K | Long wavelength type (cutoff wavelength: 1.9 µm) Features - Cutoff wavelength: 1.9 µm - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12181-005K | Long wavelength type (cutoff wavelength: 1.9 µm) Features - Cutoff wavelength: 1.9 µm - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12181-010K | Long wavelength type (cutoff wavelength: 1.9 µm) Features - Cutoff wavelength: 1.9 µm - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12181-020K | Long wavelength type (cutoff wavelength: 1.9 µm) Features - Cutoff wavelength: 1.9 µm - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12181-030K | Long wavelength type (cutoff wavelength: 1.9 µm) Features - Cutoff wavelength: 1.9 µm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12182-203K | Long wavelength type (cutoff wavelength: 2.05 µm) Features - Cutoff wavelength: 2.05 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-205K | Long wavelength type (cutoff wavelength: 2.05 µm) Features - Cutoff wavelength: 2.05 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-210K | Long wavelength type (cutoff wavelength: 2.05 µm) Features - Cutoff wavelength: 2.05 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-220K | Long wavelength type (cutoff wavelength: 2.05 µm) Features - Cutoff wavelength: 2.05 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-230K | Long wavelength type (cutoff wavelength: 2.05 µm) Features - Cutoff wavelength: 2.05 µm - Two-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-103K | Long wavelength type (cutoff wavelength: 2.07 µm) Features - Cutoff wavelength: 2.07 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-105K | Long wavelength type (cutoff wavelength: 2.07 µm) Features - Cutoff wavelength: 2.07 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-110K | Long wavelength type (cutoff wavelength: 2.07 µm) Features - Cutoff wavelength: 2.07 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-120K | Long wavelength type (cutoff wavelength: 2.07 µm) Features - Cutoff wavelength: 2.07 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-130K | Long wavelength type (cutoff wavelength: 2.07 µm) Features - Cutoff wavelength: 2.07 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12182-003K | Long wavelength type (cutoff wavelength: 2.1 µm) Features - Cutoff wavelength: 2.1 µm - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12182-005K | Long wavelength type (cutoff wavelength: 2.1 µm) Features - Cutoff wavelength: 2.1 µm - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12182-010K | Long wavelength type (cutoff wavelength: 2.1 µm) Features - Cutoff wavelength: 2.1 µm - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12182-020K | Long wavelength type (cutoff wavelength: 2.1 µm) Features - Cutoff wavelength: 2.1 µm - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12182-030K | Long wavelength type (cutoff wavelength: 2.1 µm) Features - Cutoff wavelength: 2.1 µm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12183-103K | Long wavelength type (cutoff wavelength: 2.57 µm) Features - Cutoff wavelength: 2.57 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12183-105K | Long wavelength type (cutoff wavelength: 2.57 µm) Features - Cutoff wavelength: 2.57 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12183-110K | Long wavelength type (cutoff wavelength: 2.57 µm) Features - Cutoff wavelength: 2.57 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12183-120K | Long wavelength type (cutoff wavelength: 2.57 µm) Features - Cutoff wavelength: 2.57 µm - One-stage TE-cooled - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity... |
| InGaAs PIN photodiode -- G12183-003K | Long wavelength type (cutoff wavelength: 2.6 µm) Features - Cutoff wavelength: 2.6 µm - Low cost - Photosensitive area: φ0.3 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12183-005K | Long wavelength type (cutoff wavelength: 2.6 µm) Features - Cutoff wavelength: 2.6 µm - Low cost - Photosensitive area: φ0.5 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12183-010K | Long wavelength type (cutoff wavelength: 2.6 µm) Features - Cutoff wavelength: 2.6 µm - Low cost - Photosensitive area: φ1 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12183-020K | Long wavelength type (cutoff wavelength: 2.6 µm) Features - Cutoff wavelength: 2.6 µm - Low cost - Photosensitive area: φ2 mm - Low noise - High sensitivity - High reliability... |
| InGaAs PIN photodiode -- G12183-030K | Long wavelength type (cutoff wavelength: 2.6 µm) Features - Cutoff wavelength: 2.6 µm - Low cost - Photosensitive area: φ3 mm - Low noise - High sensitivity - High reliability... |
| G5853-203 | Long wavelength type (up to 2.55 um), Two-stage TE-cooled type, 0.3 mm diameter |
| G5853-21 | Long wavelength type (up to 2.55 um), Two-stage TE-cooled type, 1 mm diameter |
| G5853-23 | Long wavelength type (up to 2.55 um), Two-stage TE-cooled type, 3 mm diameter |
| G5853-103 | Long wavelength type (up to 2.57 um), One-stage TE-cooled type, 0.3 mm diameter |
| G5853-11 | Long wavelength type (up to 2.57 um), One-stage TE-cooled type, 1 mm diameter |
| G5853-13 | Long wavelength type (up to 2.57 um), One-stage TE-cooled type, 3 mm diameter |
| G8423-05 | Long wavelength type (up to 2.6 um), Non-cooled type, 0.1 mm diameter |
| G8423-03 | Long wavelength type (up to 2.6 um), Non-cooled type, 0.3 mm diameter |
| G8373-01 | Long wavelength type (up to 2.6 um), Non-cooled type, 1 mm diameter |
| G8373-03 | Long wavelength type (up to 2.6 um), Non-cooled type, 3 mm diameter |
|
G5851-11
G5851-13 |
Long wavelength, 1 stage TE-cooled, For powermeter, gas analyzer, NIR photometry |
|
G5852-103
G5852-11 G5852-13 |
Long wavelength, 1 stage TE-cooled, For powermeter, gas analyzer, water content analyzer, NIR photometry |
| G5851-103 | Long wavelength, 1 stage TE-cooled. For powermeter, gas analyzer, NIR photometry |
|
G5851-203
G5851-21 G5851-23 |
Long wavelength, 2 stage TE-cooled, For powermeter, gas analyzer, NIR photometry |
|
G5852-203
G5852-21 G5852-23 |
Long wavelength, 2 stage TE-cooled, For powermeter, gas analyzer, water content analyzer, NIR photometry |
|
G8372-01
G8372-03 G8422-03 G8422-05 |
Long wavelength, For gas analyzer, water content analyzer, NIR photometry |
|
G8371-01
G8371-03 G8421-03 G8421-05 |
Long wavelength, For optical power meter, gas analyzer, NIR photometry |
|
P10090-01
P10090-11 P10090-21 |
Low noise, high reliability infrared detectors (for 3 um band) |
|
G8370-01
G8370-02 G8370-03 G8370-05 G8370-10 |
Low noise, large active areas, and high shunt resistance.For laser monitor, Optical power meter, general IR detector applications |
| G8370-81 | Low PDL (Polarization Depecdence Loss), For laser monitor, Optical power meter, laser diode life test |
|
P2748-40
P2748-41 P2748-42 P2750 P2750-06 P2750-08 P3257-01 P3257-10 P3257-25 P3257-30 P3257-31 P3981 P3981-01 P4249-08 P5274 P5274-01 P7752-10 |
MCT |
|
C5331-30
C5331-31 |
Operates an APD with single 5 V supply, FC connector coupling type |
|
C5331
C5331-01 C5331-02 C5331-03 C5331-04 C5331-05 |
Operates an APD with single 5 V supply, near infrared type |
|
C5331-11
C5331-12 C5331-13 |
Operates an APD with single 5 V supply, short-wavelength type |
|
P2532-01
P2682-01 P3207-07 |
PbS,PbSe |
| C10507-11-100C | Photon counting module with built-in MPPC (100 pixels, 100 um pitch, ceramic package) |
| C10751-03 | Photon counting module with built-in MPPC (100 pixels, 100 um pitch, metal package), CE compliant |
| C10507-11-100U | Photon counting module with built-in MPPC (100 pixels, 100 um pitch, metal package) |
| C10507-11-025C | Photon counting module with built-in MPPC (1600 pixels, 25 um pitch, ceramic package) |
| C10751-01 | Photon counting module with built-in MPPC (1600 pixels, 25 um pitch, metal package), CE compliant |
| C10507-11-025U | Photon counting module with built-in MPPC (1600 pixels, 25 um pitch, metal package) |
| C10507-11-050C | Photon counting module with built-in MPPC (400 pixels, 50 um pitch, ceramic package) |
| C10751-02 | Photon counting module with built-in MPPC (400 pixels, 50 um pitch, metal package), CE compliant |
| C10507-11-050U | Photon counting module with built-in MPPC (400 pixels, 50 um pitch, metal package) |
|
P9217
P9217-02 P9217-03 P9217-04 |
Room-temperature detectors capable of detecting up to 2.9 µm |
| G9906-01 | Small package InGaAs PIN photodiode with a 0.3mm active area. Spectral response range of 0.9um to 1.7um and a photosensitivity of 0.95 A/W at the peak wavelength |
|
G11193-02R
G11193-03R |
Small package, surface mount type InGaAs PIN photodiodes |
| C10475 | Specifically designed for photodiode modules (C10439 series) |
|
G8370-82
G8370-83 G8370-85 |
Standard type |
|
C11208-01
C11208-02 C11208-03 |
The C11208 series is a photon counting module that contains a thermoelectrically cooled MPPC (multi-pixel photon counter) capable of detecting ultra-low light. Along with the thermoelectrically cooled MPPC, it consists... |
| InGaAs PIN photodiode -- G11777-003P | The G11777-003P is a small-size near infrared detector available in a surface mount COB (chip on bord) package.The spectral response covers a range from 0.9 to 1.7µm ( with peak... |
| K1713-01 | The K1713-01 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K1713-02 | The K1713-02 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K1713-05 | The K1713-05 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K1713-08 | The K1713-08 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K1713-09 | The K1713-09 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K3413-01 | The K4313-01 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K3413-02 | The K4313-02 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K3413-05 | The K4313-05 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K3413-08 | The K4313-08 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| K3413-09 | The K4313-09 has a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element a long the same axis. |
| G8931-04 | Time response characteristics compatible with SONET and G/GE-PON, high response, low terminal capacitance, low dark current, For Optical fiber communications, High speed data link applications |
| C10508 | Variable gain and stable detection even at high gain |
| G10899-003K | Wide spectral response, low noise, low dark current InGaAs pin photodiiode with an active area of Φ 0.3 mm |
| G10899-005K | Wide spectral response, low noise, low dark current InGaAs pin photodiiode with an active area of Φ 0.5 mm |
| G10899-01K | Wide spectral response, low noise, low dark current InGaAs pin photodiiode with an active area of Φ 1 mm |
| G10899-02K | Wide spectral response, low noise, low dark current InGaAs pin photodiiode with an active area of Φ 2 mm |
| G10899-03K | Wide spectral response, low noise, low dark current InGaAs pin photodiiode with an active area of Φ 3 mm |
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