Power MOSFET Datasheets

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
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Power MOSFET Datasheets From:
Headquarters
Fuji Electric Corp. of America
United States
Richardson RFPD
United States
Texas Instruments
United States
Win Source Electronics
United States
Allegro MicroSystems Inc.
United States
Karl Kruse GmbH & Co. KG
Germany
ROHM Semiconductor GmbH
Germany
Solid State Devices, Inc.
La Mirada, CA
Twilight Technology Inc.
Anaheim, CA
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
Advanced Semiconductor, Inc.
United States
Advanced Thermal Solutions, Inc.
United States
Allied Electronics, Inc.
Fort Worth, TX
Fuji Electric Global
Japan
Hitachi, Ltd.
Japan
IXYS Corporation
United States
JCET Group
Milpitas, CA
Kexin Co., Ltd.
China
Leshan Radio Company, Ltd.
China
Microsemi Corp.
United States
Mitsubishi Corporation
Japan
Motorola Solutions, Inc.
United States
NCEPOWER 
China
NEC Corporation
United States
ROHM Co., Ltd.
Japan
Samsung Electronics Co., Ltd.
United States
Semikron, Inc.
Hudson, NH
Shindengen
Germany
Siemens AG
Germany
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Toshiba Corporation
Japan
Toshiba Semiconductor & Storage Products
United States
TRINAMIC Motion Control GmbH & Co. KG.
Germany
Vishay Precision Group
United States