Karl Kruse GmbH & Co. KG Datasheets for Power MOSFET

Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more

Product Name Notes
250V Single N-Channel HEXFET Power MOSFET in a D-P -- IRFR12N25DPBF
DIP/C?//DUAL POWER MOSFET DRIVER -- TSC426CPA
DPAK/100V SINGLE N-CHANNEL HEXFET POWER MOSFET IN -- IRFR120TRPBF
Power Mosfet 30V 55A D-PAK (TO-252AA) -- ILR3103
Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6 -- NTGS3446T1G
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