Universal Semiconductor, Inc. Datasheets for Power MOSFET
Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors (BJTs) and can be used in higher frequency applications where switching power losses are important.
Power MOSFET: Learn more
| Product Name | Notes |
|---|---|
| Gate Standoff Voltage Available in a wide variety of packages Low capacitance Low ON resistance P-Channel Complement Available | |
| Self-Aligning Silicon Gate Structure Dielectrically Isolatied Pair Low Interelectrode Capacitancees Input (Gate) Leakage Current Independant of Operating Point Gate-Source Voltage Differential as low as 5.0 mV | |
| Self-Aligning Silicon Gate Structure Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. High Off Isolation Low Insertion... | |
| Self-Aligning Silicon Gate Sturcture Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage -... |