Elite Semiconductor Products, Inc. Datasheets for Thyristors
Thyristors are a class of four-layer (PNPN) semiconductor devices that act as switches, rectifiers, or voltage regulators.
Thyristors: Learn more
Product Name | Notes |
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2N3654 to 2N3658, inclusive, and the S7412M are all-diffused silicon controlled rectifiers (reverse-blocking triode thyristors) intended for high-speed switching applications such as power Inverters, switching regulators, and high-current pulse applications. | |
Bidirectional Triode Thyristors All Diffused and Glass PAssivated Junctions for Greater Stability Pressfit, Stud, and Isolated Stud Packages Gate Triggering Gauranteed in All 3 Quadrants | |
Bidirectional Triode Thyristos . All Diffused and Glass Passivated Junctions for Greater StabIlIty . Pressfit, Stud and Isolated Stud Packages . Gate Triggering Guaranteed In All 3 Quadrants | |
C137 Series Phase Control SCR 23 Amperes / 500-1200 Volts | |
Features: Fast turn-off time - 10 us max. High di/dt and dv/dt capability Low thermal resistance | |
Features High di/dt and dv/dt Capabilities Low on-state voltage at high current levels Low thermal resistance | |
General purpose 8 ampere ISOLATED TRIACS with POWER GLAS passivated pellets in silicone encapsulated POWER PAC series. | |
Phase Control Type Thyristor 25-80 Amps | |
Phase Control Type Thyristor | |
Silicon Controlled Rectifier Reverse Blocking Triode Thristor | |
Silicon Controlled Rectifier Reverse Blocking Triode Thyristor | |
Silicon Controlled Rectifier TO-48 packaging | |
The 2N1S42 through 2N1850 Series of Silicon Controlled Rectifiers are reverse blocking triode thyristor semiconductor devices for use in medium power switching and phase control applications requiring blocking voltages up... | |
The General Eletric C150 and C152 Silicon Controlled Rectifiers are designed for phase control applications. There are all-diffused, Pic-Pac devices employing the field-proven amplifying gate. | |
These N-Channel Junction FETs are characterized tor ultra low noise applications requiring tightly controlled and specified noise parameters at 10 Hz and 1000 Hz. Tight matching specifications make these devices... | |
x=Triac Silicon Bidirectional Thyristor Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required | |
Glass PAssivated Chip High Stability and Reliability High di/dt and dv/dt Ratings SCR designed for high frequency power switching applications |