Elite Semiconductor Products, Inc. Datasheets for Silicon Controlled Rectifiers (SCR)
Silicon controlled rectifiers (SCR) are four-layer (PNPN) thyristors with three terminals: an input control terminal (gate), an output terminal (anode), and a terminal common to both the input and output (cathode). SCRs are used mainly with high voltages and currents, often to control alternating current (AC) where the change of sign causes the device to switch off automatically.
Silicon Controlled Rectifiers (SCR): Learn more
| Product Name | Notes |
|---|---|
| 2N3654 to 2N3658, inclusive, and the S7412M are all-diffused silicon controlled rectifiers (reverse-blocking triode thyristors) intended for high-speed switching applications such as power Inverters, switching regulators, and high-current pulse applications. | |
| C137 Series Phase Control SCR 23 Amperes / 500-1200 Volts | |
| Features: Fast turn-off time - 10 us max. High di/dt and dv/dt capability Low thermal resistance | |
| Features High di/dt and dv/dt Capabilities Low on-state voltage at high current levels Low thermal resistance | |
| Silicon Controlled Rectifier Reverse Blocking Triode Thristor | |
| Silicon Controlled Rectifier Reverse Blocking Triode Thyristor | |
| Silicon Controlled Rectifier TO-48 packaging | |
| The 2N1S42 through 2N1850 Series of Silicon Controlled Rectifiers are reverse blocking triode thyristor semiconductor devices for use in medium power switching and phase control applications requiring blocking voltages up... | |
| The General Eletric C150 and C152 Silicon Controlled Rectifiers are designed for phase control applications. There are all-diffused, Pic-Pac devices employing the field-proven amplifying gate. | |
| Glass PAssivated Chip High Stability and Reliability High di/dt and dv/dt Ratings SCR designed for high frequency power switching applications |