Elite Semiconductor Products, Inc. N-Channel Junction FET 2N6483

Description
These N-Channel Junction FETs are characterized tor ultra low noise applications requiring tightly controlled and specified noise parameters at 10 Hz and 1000 Hz. Tight matching specifications make these devices ideal as the input stage for low frequency differential, instrumentation amplifiers.
Description
These N-Channel Junction FETs are characterized tor ultra low noise applications requiring tightly controlled and specified noise parameters at 10 Hz and 1000 Hz. Tight matching specifications make these devices ideal as the input stage for low frequency differential, instrumentation amplifiers.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Junction FET - 2N6483 - Elite Semiconductor Products, Inc.
Lindenhurst, NY, USA
N-Channel Junction FET
2N6483
N-Channel Junction FET 2N6483
These N-Channel Junction FETs are characterized tor ultra low noise applications requiring tightly controlled and specified noise parameters at 10 Hz and 1000 Hz. Tight matching specifications make these devices ideal as the input stage for low frequency differential, instrumentation amplifiers.

These N-Channel Junction FETs are characterized tor ultra
low noise applications requiring tightly controlled and
specified noise parameters at 10 Hz and 1000 Hz. Tight
matching specifications make these devices ideal as the
input stage for low frequency differential, instrumentation
amplifiers.

Supplier's Site

Technical Specifications

  Elite Semiconductor Products, Inc.
Product Category Thyristors
Product Number 2N6483
Product Name N-Channel Junction FET
Thyristor Type MCT
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