Universal Semiconductor, Inc. Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| Gate Standoff Voltage Available in a wide variety of packages Low capacitance Low ON resistance P-Channel Complement Available | |
| Self-Aligning Silicon Gate Structure Dielectrically Isolatied Pair Low Interelectrode Capacitancees Input (Gate) Leakage Current Independant of Operating Point Gate-Source Voltage Differential as low as 5.0 mV | |
| Self-Aligning Silicon Gate Structure Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. High Off Isolation Low Insertion... | |
| Self-Aligning Silicon Gate Sturcture Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage -... |