Universal Semiconductor, Inc. TMF121

Description
Self-Aligning Silicon Gate Structure Dielectrically Isolatied Pair Low Interelectrode Capacitancees Input (Gate) Leakage Current Independant of Operating Point Gate-Source Voltage Differential as low as 5.0 mV
Datasheet
Description
Self-Aligning Silicon Gate Structure Dielectrically Isolatied Pair Low Interelectrode Capacitancees Input (Gate) Leakage Current Independant of Operating Point Gate-Source Voltage Differential as low as 5.0 mV
Datasheet

Suppliers

Company
Product
Description
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Universal Semiconductor, Inc.
San Jose, CA, USA
TMF121
TMF121
Self-Aligning Silicon Gate Structure Dielectrically Isolatied Pair Low Interelectrode Capacitancees Input (Gate) Leakage Current Independant of Operating Point Gate-Source Voltage Differential as low as 5.0 mV
  • Self-Aligning Silicon Gate Structure
  • Dielectrically Isolatied Pair
  • Low Interelectrode Capacitancees
  • Input (Gate) Leakage Current
  • Independant of Operating Point
  • Gate-Source Voltage Differential as low as 5.0 mV
Datasheet

Technical Specifications

  Universal Semiconductor, Inc.
Product Category Power MOSFET
Product Number TMF121
Polarity N-Channel; Dual N-Channel
Operating Mode Enhancement
Type LDMOSFET
V(BR)DSS 45 volts
rDS(on) 100 ohms
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