Skyworks Solutions, Inc. Datasheets for Diodes
Diodes are electronic components that conduct electric current in only one direction, functioning as a one-way valve. Diodes are manufactured using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.
Diodes: Learn more
Product Name | Notes |
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Isolink beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the... | |
Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over a... | |
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the... | |
Skyworks beamless diode family is designed for a high degree of device reliability in both commercial and industrial uses. The diodes are designed to offer the utmost in performance as... | |
Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 30 GHz. These devices use Skyworks wellestablished silicon... | |
Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal... | |
Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process techniques results in... | |
Skyworks silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a... | |
Skyworks silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Skyworks... | |
Skyworks SMV1705 varactors are silicon hyperabrupt junction varactor diodes specifically designed for battery operation. These devices have a high capacitance ratio and low series resistance, which makes them appropriate for... | |
Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. The DSM8100-000 is designed... | |
The Beamless Diode family is designed for a high degree of device reliability in both commercial and industrial uses. They are designed to offer the utmost in performance as well... | |
The CLA4603-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The CLA4605-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The CLA4606-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The CLA4607-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The CLA4608-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The CLA4609-086LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The CLA4610-085LF is a surface-mountable, low-capacitance silicon PIN limiter diode designed as a shunt-connected PIN diode for high-power limiter applications from 10 MHz to over 6 GHz. Maximum resistance at... | |
The CLA4611-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The DSG9500-000 is designed for low resistance, low capacitance and fast switching time. The oxide-nitride passivation layers provide reliable operation and stable junction parameters that provide complete sealing of the... | |
The Skyworks APD series of silicon PIN diodes are designed for use as switch and attenuator devices in high-performance RF and microwave circuits. The PIN diode designs are useful over... | |
The Skyworks CLA series of silicon limiter diodes provides passive receiver protection over a wide range of frequencies from 100 MHz to over 20 GHz. These devices use a well-established... | |
The Skyworks SMS392x-099 family of Si Schottky diodes are configured as ring quads intended for use in double-balanced mixers. Each ring quad die is comprised of four Schottky junctions, connected... | |
The SMP series of PIN diodes are designed for high volume switch applications from 10 MHz to beyond 2 GHz. The low current, low capacitance performance of these diodes makes... | |
The SMP1302 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes is designed for highvolume switch and attenuator applications from 10 MHz to beyond 2 GHz. | |
The SMP1302-087LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Maximum... | |
The SMP1304 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes is designed for attenuator applications from 5 MHz to beyond 2 GHz. The thick 100... | |
The SMP1304-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz... | |
The SMP1307 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for use in attenuator applications from 5 MHz to beyond 2 GHz. The... | |
The SMP1320 series of plastic packaged, surface mountable PIN diodes is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The low current... | |
The SMP1321 series of plastic packaged, surface mountable PIN diodes is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The low capacitance... | |
The SMP1322 series of plastic packaged, surface mountable PIN diodes is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The ultra-low resistance... | |
The SMP1324-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit. Maximum resistance at 50 mA is 0.75 Ω and maximum capacitance at... | |
The SMP1325-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz... | |
The SMP1325-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit. Maximum resistance at 100 mA is 0.55 Ω and maximum capacitance at... | |
The SMP1330 series of limiter diode in plastic packages is designed for use as a passive receiver protector in wireless and other RF systems covering 2 GHz and higher. It... | |
The SMP1330-085LF is a surface mountable, low capacitance silicon PIN limiter diode designed as a shunt connected PIN diode for high power limiter applications from 10 MHz to over 6... | |
The SMP1331 series of plastic packaged, surface mountable PIN diodes is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The low capacitance... | |
The SMP1331-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high power, high volume switch and attenuator applications from 10 MHz... | |
The SMP1331-087LF is a surface mountable, low-capacitance silicon PIN diode designed as a series connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6... | |
The SMP1334-084LF is a surface-mountable, low-capacitance silicon PIN diode designed as a series-connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to beyond 6 GHz. Typical... | |
The SMP1340 series of plastic packaged, surface mountable PIN diodes is designed for high volume switch applications from 10 MHz to more than 10 GHz. The short carrier lifetime of... | |
The SMP1345 series of plastic packaged, surface mountable PIN diodes is designed for high volume Low-Noise Block (LNB), Wireless Local Area Network (WLAN), and switch applications from 10 MHz to... | |
The SMP1345-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit. Maximum resistance at 10 mA is 2 Ω and maximum capacitance at... | |
The SMP1352 series of plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diodes are designed for large signal switch applications from 10 MHz to beyond 2 GHz. These... | |
The SMP1371-087LF is a surface mountable PIN diode suitable for use in an RF switch or attenuator circuit. Maximum resistance at 10 mA is 0.5 Ω and maximum capacitance at... | |
The SMPA1302-079LF plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diode is designed for switch and attenuator applications used in vehicle infotainment. The nominal 50 μm I region... | |
The SMPA1304-011LF plastic packaged, surface mountable, low capacitance (0.3 pF) silicon PIN diode is designed for attenuator applications from 5 MHz to beyond 2 GHz. The thick 100 μm I... | |
The SMPA1320-079LF plastic packaged, surface mountable PIN diode is designed for use in high volume switch applications from 10 MHz to more than 10 GHz. The low current performance of... | |
The SMPA1345-040LF plastic-packaged, surface-mountable PIN diode is designed for high-volume low-noise block (LNB), wireless local area network (WLAN), and switch applications from 10 MHz to 6 GHz. The short carrier... | |
The SMS3922, SMS3923, and SMS3924 series of 8, 20, and 70 V rated, low-cost plastic packaged Schottky diodes are designed for general purpose use in RF applications. All diodes are... | |
The SMS7621-060 is a silicon, low-barrier N-type Schottky diode with an ultra-miniature 0201 footprint. This diode may be used in detector circuits, sampling circuits, and mixer circuits. The low series... | |
The SMS7621-092 is a silicon, low barrier n-type Schottky diode anti-parallel pair. This diode pair can be used for sub-harmonic mixer circuits and other applications such as frequency multiplication. The... | |
The SMS7630-061 is a silicon, zero bias Schottky detector diode with an ultra-miniature 0201 footprint and very low barrier height. This P-type diode can be used for sensitive video detector... | |
The SMSA3923-011LF plastic packaged Schottky diode is designed for several automotive in-vehicle applications. Features AEC-Q101 qualified Package rated MSL1, 260 °C per JEDEC J-STD-020 Applications Cellular Telematics Infotainment Remote Keyless... | |
The SMSA7621-060 is a silicon, low-barrier N-type Schottky diode with an ultra-miniature 0201 footprint. This diode may be used in detector circuits, sampling circuits, and mixer circuits. The low series... | |
The SMSA7630-061 is a silicon, zero bias Schottky detector diode with an ultra-miniature 0201 footprint and very low barrier height. This P-type diode can be used for sensitive video detector... | |
The SMV1130 series of surface mount hyperabrupt junction varactor diodes are designed for very high capacitance tuning ratios with a low series resistance, which makes these devices especially attractive for... | |
The SMV121x series of silicon hyperabrupt junction varactor diodes are designed for use in Voltage Controlled Oscillators (VCOs) with a low tuning voltage operation. This family of varactors is characterized... | |
The SMV1220-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low-series resistance make this varactor appropriate for low phase-noise Voltage-Controlled Oscillators... | |
The SMV123x series of silicon hyperabrupt junction varactor diodes are designed for use in Voltage Controlled Oscillators (VCOs) with a low tuning voltage operation. The low resistance of these varactors... | |
The SMV1245 series of surface mount varactor diodes is designed for very low series resistance applications such as RF and microwave VCOs. Features High tuning ratio Low series resistance Designed... | |
The SMV1247-SMV1255 group of silicon hyperabrupt junction varactor diodes is designed for use in Voltage Controlled Oscillators (VCOs) with a low tuning voltage operation. This group of varactors is characterized... | |
The SMV1263 series of silicon hyperabrupt junction varactor diodes are designed for 3 V platforms. The high capacitance ratio and low series resistance of these varactors make them attractive for... | |
The SMV1265-040LF hyperabrupt junction tuning varactors is designed for very high capacitance tuning ratios with low series resistance, which makes this device especially attractive for wideband voltage controlled oscillator (VCO)... | |
The SMV1270-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low reverse voltage make this varactor appropriate for low-noise voltage-controlled oscillators... | |
The SMV1272-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low-series resistance make this varactor appropriate for low phase-noise Voltage-Controlled Oscillators... | |
The SMV1273-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low-series resistance make this varactor appropriate for low phase-noise Voltage-Controlled Oscillators... | |
The SMV1275-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low-series resistance make this varactor appropriate for low phase-noise Voltage-Controlled Oscillators... | |
The SMV1276-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low-series resistance make this varactor appropriate for low phase-noise Voltage-Controlled Oscillators... | |
The SMV1281 series of surface mount hyperabrupt junction varactor diodes are designed for very high capacitance tuning ratios with a low series resistance, which makes these devices especially attractive for... | |
The SMV1405–SMV1413 series of bare die, epoxy and hermetic packaged silicon abrupt junction varactor diodes is designed for use in VCOs requiring tight capacitance tolerances. The low resistance of these... | |
The SMV1405-SMV1430 group of silicon abrupt junction varactor diodes is designed for use in Voltage Controlled Oscillators (VCOs) requiring tight capacitance tolerances. The low resistance of these varactors makes them... | |
The SMV1470-004 is a dual silicon hyperabrupt junction varactor diode in a common cathode configuration. The specified high capacitance ratio and low RS of this varactor make it appropriate for... | |
The SMV1493 and SMV1494 bare die and hermetic packaged silicon abrupt junction varactor diodes are designed for use in VCOs requiring tight capacitance tolerances. The low resistance of these varactors... | |
The SMV1702-011LF silicon hyperabrupt junction varactor diode is specifically designed for battery operation. The high capacitance ratio and low series resistance of these varactors make them appropriate for low-noise Voltage... | |
The SMV1705 group of silicon hyperabrupt junction varactor diodes is specifically designed for battery operation. The specified high capacitance ratio and low reverse voltage of these varactors make them appropriate... | |
The SMV1763 series are silicon hyperabrupt junction varactor diodes specifically designed for 3 V platforms. The specified high capacitance ratio and low reverse voltage make these varactors appropriate for low... | |
The SMV1801-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low RS of this varactor make it appropriate for low... | |
The SMV2019 series are silicon hyperabrupt junction varactor diodes. The capacitance ratio and low series resistance of these varactors make them attractive for low phase noise Voltage-Controlled Oscillators (VCOs) in... | |
The SMV2020-079LF is silicon hyperabrupt junction varactor diode. The low capacitance range and High Q of this varactor makes it attractive for high frequency and low phase noise VCOs in... | |
The SMV2022 devices are silicon hyperabrupt junction varactor diodes. The specified high capacitance ratio and low series resistance of these varactors make them attractive for low phase noise VCOs in... | |
The SMV2025 series are silicon surface mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltage-controlled phase shifter, or tunable... | |
The SMV2025 series are silicon surface mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltagecontrolled phase shifter, or tunable... | |
The SMV2026 series are silicon surface-mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltagecontrolled phase shifter, or tunable bandpass... | |
The SMV2201-SMV2205 series are silicon hyperabrupt junction varactor diodes specifically designed for wide bandwidth, low-loss applications. The specified high capacitance ratio and low reverse voltage make these varactors appropriate for... | |
The SMVA1248-079LF silicon hyperabrupt junction varactor diode is designed for use in voltage controlled oscillators (VCOs) with a low tuning voltage operation and is ideal for in-vehicle infotainment applications. This... | |
The SMVA1253-079LF silicon hyperabrupt junction varactor diode is designed for use in voltage controlled oscillators (VCOs) with a low tuning voltage operation and is ideal for in-vehicle infotainment applications. This... | |
The SMVA1470-004LF is a dual silicon, hyperabrupt junction varactor diode in a common cathode configuration. The specified high capacitance ratio and low series resistance make this varactor appropriate for low-noise... | |
The SMVA1705-004LF silicon hyperabrupt junction varactor diode is specifically designed for in-vehicle infotainment applications. Features AEC-Q101 qualified Low series resistance High capacitance ratio SOT-23 package (MSL1, 260 °C per JEDEC... | |
These low-cost, surface mountable, plastic packaged silicon mixer Schottky diodes are designed for RF and microwave mixers and detectors. They include low barrier diodes and zero-bias detectors that combine Skyworks... | |
This Skyworks family of Si Schottky diodes are configured as bridge quads intended for use in double-balanced mixers. Each bridge quad die is comprised of four Schottky junctions. There are... |