PIN Diodes Datasheets

PIN diodes are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies.
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PIN Diodes Datasheets From:
Headquarters
Infineon Technologies AG
Germany
kTB Solutions
United States
ODG (Origin Data Global)
China
Richardson RFPD
United States
Rochester Electronics
United States
RS Components, Ltd.
United Kingdom
Skyworks Solutions, Inc.
United States
Win Source Electronics
United States
Broadcom Inc.
San Jose, CA
Empower RF Systems
Inglewood, CA
Karl Kruse GmbH & Co. KG
Germany
MACOM
Lowell, MA
New Jersey Semi-Conductor Products, Inc.
Springfield, NJ
PANJIT SemiConductor
Tempe, AZ
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
SemiGen
Londonderry, NH
Solid State Devices, Inc.
La Mirada, CA
Utmel Electronic Limited
China
Allied Electronics, Inc.
Fort Worth, TX
California Eastern Laboratories - CEL
Santa Clara, CA
Comchip Technology Corporation
United States
GeneSiC Semiconductor, Inc.
United States
Hitachi, Ltd.
Japan
Leshan Radio Company, Ltd.
China
Micro Commercial Components Corp.
United States
Microchip Technology, Inc.
United States
Microsemi Corp.
United States
Newark, An Avnet Company
United States
NXP Semiconductors
United States
NXP Semiconductors France SAS
France
onsemi
United States
Panasonic
Newark, NJ
Renesas Electronics Corporation
Milpitas, CA
RFMW
United States
Siemens AG
Germany
TE Connectivity ™
Berwyn, PA
Vishay Intertechnology, Inc.
United States
Vishay Precision Group
United States