Accuris Datasheets for Standards and Technical Documents
Standards and technical documents includes standards, codes, regulation, handbooks, manuals, comprehensive guides and other formal publications. Standards, codes, and regulation establish uniform specifications, procedures or technical criteria.
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| Product Name | Notes |
|---|---|
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, (HERMETICALLY SEALED IN METAL CASES), STYLES CQ08, CQ09, CQ12, AND CQ13 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TANGENTIAL RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR12 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TANGENTIAL RETAINER, TUBULAR (UNINSULATED), (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR42 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TANGENTIAL RETAINER, TUBULAR (UNINSULATED), (HERMETICALLY SEALED IN METAL CASES), STYLE CQ10 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, THREADED-STUD RETAINER, TUBULAR (UNINSULATED), (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR43 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, THREADED-STUD RETAINER, TUBULAR (UNINSULATED), (HERMETICALLY SEALED IN METAL CASES), STYLE CQ11 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (INSULATED), (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR39 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (INSULATED), (HERMETICALLY SEALED IN METAL CASES), STYLE CQ05 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR19 | |
| Capacitor, Fixed, Plastic (or Paper-Plastic) Dielectric, Axial-Wire Threaded-Stud Retainer, Tubular (Uninsulated ) (Hermetically Sealed in Metal Cases), Established Reliability, Style CQR13 | |
| CAPACITOR, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE THREADED-STUD RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR13 | |
| CAPACITOR, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, TANGENTIAL RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR32 | |
| CAPACITOR, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, THREADED-STUD RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR33 | |
| Capacitor, Fixed, Plastic Dielectric, Axial-Wire Terminal, Threaded-Stud Retainer, Tubular (Uninsulated)(Hermet ically Sealed in Metal Cases), Established Reliability, Style CQR33 | |
| CAPACITOR, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (INSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR29 | |
| CAPACITOR, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (INSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR44 | |
| CAPACITORS, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC (HERMETICALLY SEALED IN CERAMIC OR GLASS CASES) STYLE CQ20 | |
| CAPACITORS, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, (HERMETICALLY SEALED IN METAL CASES), STYLES CQ08, CQ09, CQ12, AND CQ13 | |
| CAPACITORS, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE TERMINAL, TANGENTIAL RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR12 | |
| CAPACITORS, FIXED, PLASTIC (OR PAPER-PLASTIC) DIELECTRIC, AXIAL-WIRE THREADED-STUD RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR13 | |
| CAPACITORS, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, TANGENTIAL RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR32 | |
| CAPACITORS, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, THREADED-STUD RETAINER, TUBULAR (UNINSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR33 | |
| Capacitors, Fixed, Plastic Dielectric, Axial-Wire Terminal, Threaded-Stud Retainer, Tubular (Uninsulated)(Hermet ically Sealed in Metal Cases), Established Reliability, Style CQR33 | |
| CAPACITORS, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (INSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR29 | |
| CAPACITORS, FIXED, PLASTIC DIELECTRIC, AXIAL-WIRE TERMINAL, TUBULAR (INSULATED) (HERMETICALLY SEALED IN METAL CASES), ESTABLISHED RELIABILITY, STYLE CQR44 | |
| CLOTH, WATERPROOF | |
| COATING COMPOUND, THERMAL INSULATION, FIRE- AND WATER-RESISTANT, VAPOR-BARRIER | |
| COATING COMPOUNDS, THERMAL INSULATION, FIRE- AND WATER-RESISTANT, VAPOR-BARRIER | |
| DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS | |
| DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7058CCU3, 1N7058CCU3C, AND SINGLE DIE, TYPE 1N7038U3, JAN, JANTX, JANTXV, AND JANS | |
| DIODE, SILICON, SCHOTTKY, TYPE 1N7069T1, JAN, JANTX, JANTXV, AND JANS | |
| ELECTRON TUBE, CATHODE RAY TYPE 3ADP1, 3ADP2, 3ADP7, AND 3ADP11 | |
| ELECTRON TUBE, CATHODE RAY Types 3ADP1, 3ADP2, 3ADP7, and 3ADP11 | |
| ELECTRON TUBE, GAS SWITCHING TYPE 1B58A | |
| ELECTRON TUBE, GAS SWITCHING TYPE 6378 | |
| ELECTRON TUBE, KLYSTRON TYPE 2K25 | |
| ELECTRON TUBE, RADIATION COUNTER TYPE 7616 | |
| ELECTRON TUBE, RADIATION COUNTER TYPES 5980 AND 5980A | |
| ELECTRON TUBE, RECEIVING TYPE 5886 | |
| ELECTRON TUBE, RECEIVING TYPE 5U4GB | |
| ELECTRON TUBE, RECEIVING TYPE 6AU6WC | |
| ELECTRON TUBE, VOLTAGE REGULATOR TYPE 7615 | |
| Gaskets, Synthetic Rubber Oil Resistant, Slide Valve (for 21- Inch Submerged Torpedo Tubes) | |
| GASKETS, SYNTHETIC RUBBER, OIL RESISTANT, SLIDE VALVE (FOR 21-INCH SUBMERGED TORPEDO TUBES) | |
| RECTIFIER, SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER, TYPES 1N8255, 1N8256, 1N8257, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, 1N8036US THROUGH 1N8072US, 1N8073US THROUGH 1N8109US, AND 1N8110US THROUGH 1N8146US, JAN, JANTX,... | |
| Semiconductor Device, Diode Silicon, Unipolar Transient Voltage Suppresssor, Types 1N8036 through 1N8072, 1N8073 through 1N8109, 1N8110 through 1N8146, 1N8036US through 1N8072US, 1N8073US through 1N8109US, and 1N8110US through 1N8146US, JAN, JANTX,... | |
| Semiconductor Device, Diode, Non-Hermetic, Epoxy Surface Mount, Silicon, Bidirectional Transient Voltage Suppressor, Types 1N6036AUEG through 1N6072AUEG, 1N6036AUEJ through 1N6072AUEJ, JAN, JANTX, and JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUG THROUGH 1N6072AUG, 1N6036AUJ THROUGH 1N6072AUJ, JANP, JANPTX, AND JANPTXV | |
| SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH 1N5665AUEJ, 1N5907UEG, 1N5907UEJ JAN, | |
| SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N5555UG THROUGH 1N5558UG, 1N5555UJ THROUGH 1N5558UJ, 1N5629AUG THROUGH 1N5665AUG, 1N5629AUJ THROUGH 1N5665AUJ, 1N5907UG, 1N5907UJ, JANP, JANPTX, | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6950 THROUGH 1N6986, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6950 THROUGH 1N6986, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072 AND 1N7078 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072, AND 1N7078 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), TYPE 1N7072, AND 1N7078 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7062CCT1, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY, COMMON CATHODE, TYPE 1N7072CCT3, AND 1N7078U3 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7070CC, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL, SCHOTTKY, COMMON CATHODE, TYPE 1N7070CCT3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST RECOVERY, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, AXIAL LEADED AND SURFACE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST RECOVERY, TYPES 1N8255, 1N8256, 1N8257, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, TYPES 1N6902, 1N6903, 1N6904, AND 1N6905, QUALITY LEVELS JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6872, 1N6873, 1N6874, AND 1N6875, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6872, 1N6873, 1N6874, AND 1N6875, QUALITY LEVELS JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6872UTK2, 1N6873UTK2, 1N6874UTK2, 1N6875UTK2, 1N6872UTK2AS, 1N6873UTK2AS, 1N6874UTK2AS, 1N6875UTK2AS, 1N6872UTK2CS, 1N6873UTK2CS, 1N6874UTK2CS, AND 1N6875UTK2CS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6872UTK2, 1N6873UTK2, 1N6874UTK2, 1N6875UTK2, 1N6872UTK2AS, 1N6873UTK2AS, 1N6874UTK2AS, 1N6875UTK2AS, 1N6872UTK2CS, 1N6873UTK2CS, 1N6874UTK2CS, AND 1N6875UTK2CS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6882, 1N6883, 1N6884, 1N6885, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6882UTK4, 1N6883UTK4, 1N6884UTK4, 1N6885UTK4, 1N6882UTK4CS, 1N6883UTK4CS, 1N6884UTK4CS, 1N6885UTK4CS, 1N6882UTK4AS, 1N6883UTK4AS, 1N6884UTK4AS, AND 1N6885UTK4AS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6882UTK4, 1N6883UTK4, 1N6884UTK4, 1N6885UTK4, 1N6882UTK4CS, 1N6883UTK4CS, 1N6884UTK4CS, 1N6885UTK4CS, 1N6882UTK4AS, 1N6883UTK4AS, 1N6884UTK4AS, AND 1N6885UTK4AS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6892, 1N6893, 1N6894, 1N6895, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6892UTK1, 1N6893UTK1, 1N6894UTK1, 1N6895UTK1, 1N6892UTK1CS, 1N6893UTK1CS, 1N6894UTK1CS, 1N6895UTK1CS, 1N6892UTK1AS, 1N6893UTK1AS, 1N6894UTK1AS, AND 1N6895UTK1AS JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6892UTK1, 1N6893UTK1, 1N6894UTK1, 1N6895UTK1, 1N6892UTK1CS, 1N6893UTK1CS, 1N6894UTK1CS, 1N6895UTK1CS, 1N6892UTK1AS, 1N6893UTK1AS, 1N6894UTK1AS, AND 1N6895UTK1AS JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6902, 1N6903, 1N6904, 1N6905, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6902UTK3, 1N6903UTK3, 1N6904UTK3, 1N6905UTK3, 1N6902UTK3CS, 1N6903UTK3CS, 1N6904UTK3CS, 1N6905UTK3CS, 1N6902UTK3AS, 1N6903UTK3AS, 1N6904UTK3AS AND 1N6905UTK3AS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6902UTK3, 1N6903UTK3, 1N6904UTK3, 1N6905UTK3, 1N6902UTK3CS, 1N6903UTK3CS, 1N6904UTK3CS, 1N6905UTK3CS, 1N6902UTK3AS, 1N6903UTK3AS, 1N6904UTK3AS AND 1N6905UTK3AS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6910, 1N6911, 1N6912, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6910UTK2, 1N6911UTK2, 1N6912UTK2, 1N6910UTK2CS, 1N6911UTK2CS, 1N6912UTK2CS, 1N6910UTK2AS, 1N6911UTK2AS, AND 1N6912UTK2AS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6910UTK2, 1N6911UTK2, 1N6912UTK2, 1N6910UTK2CS, 1N6911UTK2CS, 1N6912UTK2CS, 1N6910UTK2AS, 1N6911UTK2AS, AND 1N6912UTK2AS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6920UTK4, 1N6921UTK4, 1N6922UTK4, 1N6920UTK4CS, 1N6921UTK4CS, 1N6922UTK4CS, 1N6920UTK4AS, 1N6921UTK4AS, AND 1N6922UTK4AS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6920UTK4, 1N6921UTK4, 1N6922UTK4, 1N6920UTK4CS, 1N6921UTK4CS, 1N6922UTK4CS, 1N6920UTK4AS, 1N6921UTK4AS, AND 1N6922UTK4AS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6930UTK1, 1N6931UTK1, 1N6932UTK1, 1N6930UTK1CS, 1N6931UTK1CS, 1N6932UTK1CS, 1N6930UTK1AS, 1N6931UTK1AS, AND 1N6932UTK1AS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6930UTK1, 1N6931UTK1, 1N6932UTK1, 1N6930UTK1CS, 1N6931UTK1CS, 1N6932UTK1CS, 1N6930UTK1AS, 1N6931UTK1AS, AND 1N6932UTK1AS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6940, 1N6941, 1N6942 JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6940UTK3, 1N6941UTK3, 1N6942UTK3, 1N6940UTK3CS, 1N6941UTK3CS, 1N6942UTK3CS, 1N6940UTK3AS, 1N6941UTK3AS, AND 1N6942UTK3AS, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER, TYPES 1N6940UTK3, 1N6941UTK3, 1N6942UTK3, 1N6940UTK3CS, 1N6941UTK3CS, 1N6942UTK3CS, 1N6940UTK3AS, 1N6941UTK3AS, AND 1N6942UTK3AS, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DEVICE TYPE 1N7059 (DUAL, CENTER TAP) AND 1N7060 (SINGLE), QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL DIODE, COMMON CATHODE, DEVICE TYPE 1N7064, SURFACE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7041CCU1 AND SINGLE DIODE TYPE 1N7045T3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7058CCU3 AND SINGLE DIE, TYPE 1N7038U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N7059CCT3, AND SINGLE TYPE 1N7060U3, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Schottky, Dual, Center Tap, Type 1N7059CCT3, and Single Type IN7060U3, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7037CCU1, 1N7043CAT1, 1N7043CCT1, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7039 AND 1N7047, (FLANGE MOUNT AND SURFACE MOUNT PACKAGES) QUALITY LEVELS JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7039CCT1, 1N7039CCU1 AND 1N7047CCT3, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPES 1N7058CCU3, 1N7058CCU3C, AND SINGLE DIE, TYPE 1N7038U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7070, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7071, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, ENCAPSULATED (THROUGH-HOLE), TYPE 1N7071CCT8, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7064CCU3 and 1N7064CCU3C, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7071CCT8, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Schottky, Rectifier, Types 1N6920UTK4, 1N6921UTK4, 1N6922UTK4, 1N6920UTK4CS, 1N6921UTK4CS, 1N6922UTK4CS, 1N6920TK4AS, 1N6921UTK4AS, and 1N6922UTK4AS, JANTX, JANTXV, and JANS | |
| Semiconductor Device, Diode, Silicon, Schottky, Schottky Rectifier, Types 1N6930UTK1, 1N6931UTK1, 1N6932UTK1, 1N6930UTK1CS, 1N6931UTK1CS, 1N6932UTK1CS, 1N6930UTK1AS, 1N6931UTK1AS, and 1N6932UTK1AS, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N7069, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N7069T1, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, 1N5802CBUS, 1N5804CBUS, 1N5806CBUS, 1N5807CBUS, 1N5809CBUS, AND 1N5811CBUS, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N5802CB, 1N5804CB, 1N5806CB, 1N5807CB, 1N5809CB, AND 1N5811CB, AXIAL LEADED AND SURFACE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N7066, 1N7067, 1N7068, 1N7066US, 1N7067US, AND 1N7068US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, TYPES 1N7066, 1N7067, 1N7068, AXIAL LEADED AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N8036 THROUGH 1N8072, 1N8073 THROUGH 1N8109, 1N8110 THROUGH 1N8146, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS... | |
| SEMICONDUCTOR DEVICE, DUAL TRANSISTOR, UNITIZED, NPN/PNP, SILICON, LOW-POWER, TYPES M19500/773-01, JAN, JANTX, JANTXV, JANS, JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UC, JANTXVR, F, AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) DUAL TRANSISTOR, N-CHANNEL AND P-CHANNEL, LOGIC-LEVEL SILICON TYPES 2N7632UD, JANTXVR, F, AND JANSR, F | |
| Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Dual Transistor, N-Channel and PChannel, Logic-Level Silicon Types 2N7632UD, JANTXVR, F, and JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON TYPES 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR AND F AND JANSR AND... | |
| Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Quad Transistor, N-Channel and PChannel, Silicon Types 2N7521U, 2N7522U, 2N7525, AND 2N7526, JANTXVR and F and JANSR and... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F AND G AND JANSR, F AND G | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7579U2, 2N7581U2, 2N7583U2, AND 2N7585U2, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7580T1, 2N7582T1, 2N7584T1, AND 2N7586T1, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7587U3, 2N7587U3C, 2N7589U3, 2N7589U3C, 2N7591U3, 2N7591U3C, 2N7593U3, AND 2N7593U3C, JANTXVR, JANTXVF, JANSR, AND JANSF... | |
| Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon, Types 2N7588T3, 2N7590T3, 2N7592T3 and 2N7594T3, JANTVR, JANTXVF, JANSR and JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7588T3, 2N7590T3, 2N7592T3 AND 2N7594T3, JANTXVR, JANTXVF, JANSR AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7609U8 AND 2N7609U8C, JANTXVR, F AND G AND JANSR, F AND G | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED QUAD TRANSISTOR, N-CHANNEL AND P-CHANNEL, SILICON, TYPES 2N7518 AND 2N7518U, JANTXVR, F, AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7519U3, 2N7519U3C, 2N7519T3, 2N7520U3, 2N7520U3C, AND 2N7520T3, JANTXVR, F AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7558, 2N7559 2N7560, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, ENCAPSULATED PLASTIC, N-CHANNEL, SILICON, TYPE 2N7563, 2N764, 2N7565, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPE 2N7608T2, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7607T3 AND 2N7606U3 JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7616UB, 2N7616UBC, 2N7616UBN, 2N7616UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, RADIATION HARDENED, SILICON, TYPE 2N7504T2, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANSF, JANSG, JANSR, AND JANSH | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7507U3, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF | |
| Semiconductor Device, Field Effect Transistor, P-Channel, Radiation Hardened (Total Dose and Single Event Effects), Logic- Level Silicon, Types 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, and JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7624U3 AND 2N7625T3, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, 2N7626UBN, 2N7626UBCN, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), LOGIC-LEVEL SILICON, TYPES 2N7626UB, 2N7626UBC, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505T3, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7508U3, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR DIE, N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC | |
| Semiconductor Device, Field Effect, Radiation Hardened (Total Dose and Single Event Effects) Transistor Die, N-Channel and PChannel, Silicon, Various Types, JANHC and JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPE 3N35 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N5551 AND 2N5551UB, JAN, JANTX, JANTXV, JANS, AND JANSR | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N5551 AND 2N5551UB, JAN, JANTX, JANTXV, JANS, JANSR, JANHC, AND JANKC | |
| Semiconductor Device, Transistor, NPN, Silicon, Power Darlington Types 2N7569, 2N7570, and 2N7571 JAN, JANTX, JANTXV and JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7569, 2N7570, AND 2N7571, JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7572, 2N7573, AND 2N7574, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7575, 2N7576, AND 2N7577, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Transistor, NPN, Silicon, Power Darlington, Types 2N7575, 2N7576, and 2N7577, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING TYPE 2N560 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB, JAN, JANS, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB, JAN, JANS, JANTX, JANTXV, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3725, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N5010 THROUGH 2N5015, 2N5010S THROUGH 2N5015S, 2N5010U4 THROUGH 2N5015U4, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM LOW POWER TYPE 2N1142 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM TYPE 2N499 AND 2N499A | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N1195 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N393 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N1025, 2N1026 AND 2N1469 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N5401UB, JANS, JANSR, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICES, DIODE, SILICON, SCHOTTKY, DUAL DIE TYPES 1N7058CCU3, 1N7058CCU3C, AND SINGLE DIE TYPE 1N7038U3, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICES, DIODE, SILICON, SCHOTTKY, DUAL DIODE, COMMON CATHODE, TYPE 1N7041 AND SINGLE DIODE TYPE 1N7045, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICES, GENERAL SPECIFICATION FOR | |
| SEMICONDUCTOR, DIODE, SILICON, SCHOTTKY, TYPE 1N7069, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, DIE, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL AND P-CHANNEL, SILICON, VARIOUS TYPES, JANHC AND JANKC | |
| TRANSISTOR, DUAL NPN/PNP SILICON, DUAL TRANSISTOR, UNITIZED, NPN/PNP, SILICON, FOR LOWPOWER APPLICATIONS, TYPES M19500/773-01, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, AND JANSR | |
| TRANSISTOR, FIELD EFFECT N-CHANNEL, SILICON, SURFACE MOUNT PACKAGE, TYPE 2N7507 QUALITY LEVELS JANTX, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED * P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7580, 2N7582, 2N7584, AND 2N7586, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, DEVICE, TYPES 2N7523T1, 2N7523U2, 2N7524T1, AND 2N7524U2, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, ENCAPSULATED (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, DEVICE, TYPES 2N7523, AND 2N7524, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF | |
| Transistor, Field Effect Radiation Hardened, N-Channel, Logic-Level Silicon, Encapsulated, Type 2N7608T2, JANTXV, and JAN | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, LOGIC-LEVEL SILICON, ENCAPSULATED, TYPE 2N7608T2, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7579, 2N7581, 2N7583, AND 2N7585, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589,2N7591, AND 2N7593,QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7606 AND 2N7607 QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7598, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7647 AND 2N7648, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7647, 2N7648, AND 2N7649, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7648 QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7650 AND 2N7651, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7652 AND 2N7653, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7652, 2N7653, AND 2N7658, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7652, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7655, 2N7656, 2N7657, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH HOLE AND SURFACE MOUNT, TYPES 2N7624 AND 2N7625 QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT, TYPES 2N7519 AND 2N7520, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, TYPES 2N7659, 2N7660, AND 2N7661, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, TYPES 2N7659, 2N7660, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, TYPES 2N7659, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, TYPES 2N7664, 2N7665, 2N7666, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL, SILICON, TYPES 2N7665, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, TYPES 2N7626, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON, TYPE 2N7505, JANTX, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED SILICON, TYPES 2N7503U8 AND 2N7503U8C, JANTXVR, F, G AND H AND JANSR, F, G AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, LOGIC-LEVEL SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7616, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND F | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594, JANTXVR AND F AND JANSR, F, AND G | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7588, 2N7590, 2N7592, AND 2N7594,JANTXVR AND F AND JANSR AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, SURFACE MOUNT, RADIATION HARDENED, TYPES 2N7663, QUALITY LEVELS JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT, P-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7545, 2N7546, 2N7547, AND 2N7548, JANTXVR, F, G, H AND JANSR, F, G, H | |
| TRANSISTOR, FIELD EFFECT, P-CHANNEL, SILICON, RADIATION HARDENED, TYPES 2N7506U8 AND 2N7506U8C, JANTXVR, JANTXVF, JANSR AND JANSF | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, DEVICE TYPES 2N7609U8 AND 2N7609U8C, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT AND UN-ENCAPSULATED, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, SILICON, SURFACE MOUNT, TYPES 2N7587, 2N7589, 2N7591, AND 2N7593, QUALITY LEVELS JANTXV and JANS | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549, AND 2N7550, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, P-CHANNEL, SILICON, DEVICE TYPES 2N7549T1, 2N7549U2, 2N7550T1, AND 2N7550U2, JANTXVR, F AND JANSR, F | |
| TRANSISTOR, NPN, SILICON, LOW-POWER, TYPE 2N5551, ENCAPSULATED (SURFACE MOUNT PACKAGES) AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, NPN, SILICON, LOW-POWER, TYPE 2N5551, JAN, JANTX, JANTXV, JANS, JANSR, JANHC, AND JANKC | |
| TRANSISTOR, NPN, SILICON, MEDIUM-POWER, THROUGH-HOLE MOUNT PACKAGE, TYPES 2N497, 2N498, 2N656, AND 2N657, QUALITY LEVEL JAN | |
| TRANSISTOR, NPN, SILICON, MEDIUM\x96POWER, THROUGH-HOLE MOUNT PACKAGE, TYPES 2N497, 2N498, 2N656, AND 2N657, QUALITY LEVEL JAN | |
| TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPES 2N7575, 2N7576, AND 2N7577, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, NPN, SILICON, SWITCHING, DEVICE TYPES 2N5010 THROUGH 2N5015, JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, NPN, SILICON, SWITCHING, MEDIUM\x96POWER, THROUGH-HOLE MOUNT, TYPES 2N696 AND 2N697, QUALITY LEVEL JAN | |
| TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3904A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, PNP, SILICON, LOW-POWER, TYPE 2N5401, JANS, JANSR, JAN, JANTX, AND JANTXV | |
| TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N3906A, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
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