Accuris Datasheets for Standards and Technical Documents
Standards and technical documents includes standards, codes, regulation, handbooks, manuals, comprehensive guides and other formal publications. Standards, codes, and regulation establish uniform specifications, procedures or technical criteria.
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| Product Name | Notes |
|---|---|
| CONTROL-DISPLAY, OPTOELECTRONIC, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER, ENCAPSULATED (THROUGH-HOLE PACKAGE), TYPES 4N51, 4N52, 4N53, AND 4N54, JAN, JANTX, AND JANTXV | |
| Control-Display,Opto electronic, Diode, Light Emitting, Solid State, Red, Numeric and Hexadecimal, with on Board Decoder/Driver, Encapsulated (through-Hole Package), Types 4N51, 4N52, 4N53, and 4N54, JAN, JANTX, and JANTXV | |
| DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS | |
| DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER TYPES 4N51, 4N52, 4N53 AND 4N54 JAN AND JANTX | |
| Displays, Diode, Light Emitting, Solid State, Red, Numeric and Hexadecimal, with on Board Decoder/Driver Types 4N51, 4N52, 4N53, 4N54 Jan and Jantx | |
| DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER TYPES 4N51, 4N52, 4N53, AND 4N54, JAN AND JANTX | |
| DISPLAYS, DIODE, LIGHT EMITTING, SOLID STATE, RED, NUMERIC AND HEXADECIMAL, WITH ON BOARD DECODER/DRIVER TYPES 4N51, 4N52, 4N53, AND 4N54, JAN, JANTX, AND TXV | |
| RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, DUAL SCHOTTKY CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPE 1N6842, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, DUAL SCHOTTKY CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPES 1N6840 AND 1N6841, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, SCHOTTKY, DUAL, CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPE 1N6842, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| RECTIFIER, SEMICONDUCTOR DEVICE, SILICON, SCHOTTKY, DUAL, CENTER TAP, FOR POWER APPLICATIONS, SURFACE MOUNT, TYPE 1N6843, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2 | |
| SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARESENIDE POWER RECTIFIER TYPE 1N6751 JANTX, JANTXV and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARESENIDE POWER RECTIFIER, COMMON CATHODE TYPE 1N6755 JANTX, JANTXV and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER COMMON CATHODE TYPE 1N6753 JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER TYPE 1N6751 JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, COMMON CATHODE TYPE 1N6755 JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, TYPE 1N6757, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, BARRIER RECTIFIER, SCHOTTKY, TYPES 1N6826, AND 1N6831 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECIFIER SURFACE MOUNTED, TYPE 1N6842U3, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Dual Schottky Center Tap Power Rectifier Surface Mounted, Type 1N6842U3, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPE 1N6842U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6843U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, CASE MOUNT THROUGH HOLE PACKAGE, STANDARD AND REVERSE POLARITY, TYPES 1N6762 THROUGH 1N6765, QUALITY LEVELS JAN,... | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, THROUGH HOLE MOUNT PACKAGE, TYPES 1N6768 THROUGH 1N6771, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6762 THROUGH 1N6765 AND 1N6762R THROUGH 1N6765R, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 AND 1N6767, 1N6766R AND 1N6767R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6766 THROUGH 1N6767 AND 1N6767R THROUGH 1N6767R JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6768 THROUGH 1N6771 AND 1N6768R THROUGH 1N6771R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6772, 1N6773, 1N6772R AND 1N6773R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY TYPE 1N6781, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY, TYPE 1N6781 JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, SCHOTTKY, TYPE 1N6781, JAN, JANTX, JANTXV AND JANS | |
| Semiconductor Device, Diode, Silicon, Power Rectifier, Schottky, Type 1N6781, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1 N6774 THROUGH 1 N6777 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6710 THROUGH 1N6716 AND 1N6710R THROUGH 1N6716R JANTX, JANTXV, AND JANS AND POWER RECTIFIER, STANDARD RECOVERY, TYPES 1N6710B THROUGH 1N6716B AND 1N6710BR... | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6774 THROUGH 1N6777, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779 JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6778 AND 1N6779, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Schottky Power Rectifier, Common Cathode or Anode Center Tap, Types 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3 and 1N6833U3 JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6828, 1N6828R, 1N6833, 1N6833R, 1N6828U3, AND 1N6833U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNT TYPE 1N6845U3, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNT, TYPE 1N6845U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY POWER RECTIFIER, SURFACE MOUNTED, TYPE 1N6844U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N6843CCU3 , JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP, TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE OR COMMON ANODE CENTER TAP, TYPES 1N6785 AND 1N6785R, JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, DEVICE TYPES 1N6785 AND 1N6785R, COMMON CATHODE OR COMMON ANODE CENTER TAP, QUALITY LEVELS JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N6844U3, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N6844U3, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SURFACE MOUNT POWER RECTIFIER, TYPES 1N6804UEG2 THROUGH 1N6810UEG2 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4148SCSP (NBN), JANHC AND JANKC | |
| Semiconductor Device, Diode, Silicon, Switching Types 1N4148SCSP (NBN), JANHC, JANKC | |
| Semiconductor Device, Diode, Silicon, Switching Types 1N4148SOI (NBN), JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N4148SOI(NBN), JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N4148UE2 JAN, JANTX, AND JANJ | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECT), TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N7410 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPE 2N7430T1 JANTXVD, JANTXVR, JANSD, AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7456U1, 2N7457U1, 2N7458U1, AND 2N7459U1 JANTXVD, JANTXVR, JANSD, AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON TYPES 2N7515, 2N7516, AND 2N7517 JANTXVD, R AND JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410 JANTXD, -R, JANTXVD, -R, AND JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPE 2N7410, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXVD, R AND JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G AND H AND JANSR, F, G AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7468U2 AND 2N7469U2 JANTXVR, F, G, AND H, AND JANSR, F, G, AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1 JANTXVR, F, G AND H AND JANSR, F, G AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7478T1 JANTXVR, F, G AND H AND JANSR, F, G AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7479U3, 2N7480U3 AND 2N7481U3 JANTXVR, F, G AND H AND JANSR, F, G AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7482T3, 2N7483T3 AND 2N7484T3 JANTXVR, F, G AND H AND JANSR, F, G AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7485U3, 2N7486U3 AND 2N7487U3 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3 AND 2N7490T3 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7491T2, 2N7492T2 AND 2N7493T2 JANTXVR, F, G AND H AND JANSR, F, G AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7494U5, 2N7495U5 AND 2N7496U5 JANTXVR, F, G AND H AND JANSR, F, G AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7497T2, 2N7498T2 AND 2N7499T2 JANTXVR AND JANSR | |
| Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, N-Channel, Silicon Types 2N7497T2, 2N7498T2, and 2N7499T2, JANTXVR and JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7500U5, 2N7501U5, AND 2N7502U5 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, 2N7487U3, AND 2N7555U3 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, AND 2N7487U3, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, AND 2N7499T2, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7411 JANTXD, -R, JANTXVD,-R AND JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438 and 2N7439 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2 AND 2N7464T2 AND U5 SUFFIXES JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392 JANTXVR; AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7545U3, 2N7546U3, 2N7547T3, AND 2N7548T3, JANTXVR, F, G, H AND JANSR, F, G, H... | |
| Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects)Transistor, P-Channel Silicon Type 2N7411 JANSD and JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7445T1 JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7462U1 JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424, 2N7425 AND 2N7426 JANTXVR, JANTXVF, JANSR AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON TYPES 2N7424U, 2N7425U AND 2N7426U JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425 AND 2N7426 JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431U, 2N7432U, and 2N7433U JANTXVR, F, G, and H; and JANSR, F, G, and H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U and 2N7433U JANTXVR, F, G, and H; and JANSR, F, G, and H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U JANTXVR, F, G, AND H; AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7512, 2N7513, AND 2N7514 JANTXVD, R AND JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON, TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7488T3, 2N7489T3, AND 2N7490T3, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7475T1, 2N7476T1, AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS), JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7479U3, 2N7480U3, AND 2N7481U3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7482T3, 2N7483T3, AND 2N7484T3, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, JANTXVR, F, G, AND H, AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL,SILICON, TYPES 2N7485U3, 2N7486U3, 2N7487U3, AND 2N7555U3 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON TYPE 2N7440, AND 2N7441 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7431, 2N7432, AND 2N7433 JANTXVR, F, G, AND H; AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7463T2, 2N7464T2, 2N7463U5 AND 2N7464U5 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7431U, 2N7432U, AND 2N7433U, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7465T3 AND 2N7466T3 AND U3 SUFFIXES, JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7002, 2N7002T2, AND 2N7002UB, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON TYPE 2N7537, 2N7537A, JAN, JANTX | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, JAN AND JANTX | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7541T3, 2N7542U3, 2N7543T3 AND 2N7544U3 JAN, JANTX, JANTXV, JANHC AND JANKC | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, N-CHANNEL SILICON TYPES 2N7475T1, 2N7476T1 AND 2N7477T1 (TOTAL DOSE AND SINGLE EVENT EFFECTS) JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N and P CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC AND JANKC | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED, TRANSISTOR DIE, N AND P-CHANNEL, SILICON VARIOUS TYPES JANHC, AND JANKC | |
| Semiconductor Device, Hermetic, Diode, Silicon, Rectifier, Schottky Barrier, Types 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, and JANKC | |
| SEMICONDUCTOR DEVICE, TANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL SILICON TYPES 2N7422, 2N7422U, 2N7423 AND 2N7423U JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPE 2N7467U2, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7472U2, 2N7473U2 AND 2N7474U2 JANTXVR AND JANSR | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7472U2, 2N7473U2, AND 2N7474U2, JANTXVR AND JANSR | |
| Semiconductor Device, Transistor, Field Effect, Silicon, NChannel, Radiation Hardened (Total Dose and Single Event Effects), Types 2N7472U2, 2N7473U2, and 2N7474U2, JANTXVR and JANSR | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N6674T1, 2N6674T3, 2N6675T1, 2N6675T3 JAN, JANTX, and JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6674T1, 2N6674T3, 2N6675T1, 2N6675T3, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPES 2N6674T1, 2N6674T3, 2N6675T1, AND 2N6675T3, JAN, JANTX, AND JANTXV | |
| Semiconductor Device, Transistor, Plastic, NPN, Silicon, Switching, Low Noise Type 2N2484UE1 JAN, JANTX, JANJ | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N2222AUE1 JAN, JANTX, JANJ | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, NPN, SILICON, SWITCHING, TYPE 2N3700UE1, JAN, JANTX, JANJ | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N2907AUE1 JAN, JANTX, JANJ | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PLASTIC, PNP, SILICON, SWITCHING, TYPE 2N4033UE1 JAN, JANTX, JANJ | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, SWITCHING TYPE 2N1120 | |
| SEMICONDUCTOR DEVICE, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE CENTER TAP) TYPES 1N6766 AND 1N6767, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND... | |
| SEMICONDUCTOR, DEVICE TRANSISTOR, PNP, GERMANIUM, LOW POWER TYPES 2N43AZ1, 2N43AZ2, 2N44AZ1 AND 2N44AZ2 | |
| TRANSISTOR, FIELD EFFECT P-CHANNEL, SILICON, RADIATION HARDENED, P-CHANNEL, TYPES 2N7422, 2N7422U, 2N7423, AND 2N7423U, JANTXVR AND F AND JANSR AND F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, 2N7502U5, AND 2N7562U5 JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) N-CHANNEL, SILICON, TYPES 2N7500U5, 2N7501U5, AND 2N7502U5, JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON TYPES 2N7463, 2N7464, JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7444, 2N7434, 2N7391, AND 2N7392, JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7485U3, 2N7486U3, 2N7487U3, AND 2N7555U3 JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7424U, 2N7425U, AND 2N7426U, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, DEVICE TYPES 2N7470T1 AND 2N7471T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON DEVICE TYPES 2N7488T3, 2N7489T3, 2N7490T3, AND 2N7556T3 JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, DEVICE TYPES 2N7475, 2N7476, AND 2N7477 JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, SILICON, TYPES 2N7465 AND 2N7466, JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, N-CHANNEL, THROUGH-HOLE, DEVICE TYPES 2N7470 AND 2N7471, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED, P-CHANNEL SILICON, TYPES 2N7424, 2N7425, AND 2N7426, JANTXVR, JANTXVF, JANSR, AND JANSF | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, FLANGE MOUNT PACKAGE, RADIATION HARDENED (TOTAL DOSE ONLY), TYPES 2N7405, 2N7406, 2N7407, AND 2N7408, QUALITY LEVELS JANSD AND JANSR | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPE 2N7467, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (SURFACE MOUNT PACKAGE), TYPES 2N7479, 2N7480, AND 2N7481, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH HOLE PACKAGE), TYPES 2N7482, 2N7483, AND 2N7484, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE MOUNT PACKAGE), TYPES 2N7509, 2N7510, AND 2N7511, JANTXVD, R AND JANSD, R | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7494U5, 2N7495U5, AND 2N7496U5, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7515, 2N7516, AND 2N7517, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT, PLASTIC, N-CHANNEL, SILICON, TYPE 2N7537, 2N7537A, 2N7552, 2N7553, 2N7554, JAN AND JANTX | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7431, 2N7432, AND 2N7433, JANTXVR, F, G, AND H; AND JANSR, F, G, AND H... | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7468 AND 2N7469 JANTXVR, F, G AND H AND JANSR, F, G AND H | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7497T2, 2N7498T2, 2N7499T2, AND 2N7561T2 JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED, N-CHANNEL, DEVICE TYPE 2N7478T1, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED (SURFACE MOUNT AND CARRIER BOARD PACKAGES), TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR | |
| TRANSISTOR, FIELD EFFECT, SILICON, N-CHANNEL, RADIATION HARDENED, ENCAPSULATED SURFACE MOUNT PACKAGE, TYPES 2N7472, 2N7473, AND 2N7474, JANTXVR AND JANSR | |
| TRANSISTOR, FIELD, EFFECT, N-CHANNEL, SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TYPES 2N7491T2, 2N7492T2, AND 2N7493T2, QUALITY LEVELS JANTXV AND JANS | |
| TRANSISTOR, HIGH VOLTAGE, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7387 AND 2N7387U1, JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, NPN, PLASTIC, SILICON, SWITCHING, TYPE 2N3700UE1, JAN and JANTX | |
| TRANSISTOR, NPN, SILICON, SWITCHING, NON-HERMETIC (PLASTIC ENCAPSULATED), SURFACE MOUNT, TYPE 2N2222A QUALITY LEVELS JANP AND JANPTX | |
| TRANSISTOR, SILICON, N AND P-CHANNEL, FIELD EFFECT, RADIATION HARDENED, UNENCAPSULATED DIE, VARIOUS TYPES, QUALITY LEVELS JANHC AND JANKC |
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