Accuris Datasheets for Standards and Technical Documents
Standards and technical documents includes standards, codes, regulation, handbooks, manuals, comprehensive guides and other formal publications. Standards, codes, and regulation establish uniform specifications, procedures or technical criteria.
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| Product Name | Notes |
|---|---|
| * TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS | |
| DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 JAN, JANTX, JANTXV, AND JANS | |
| DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688 AND 1N6689, JANTX, JANTXV, AND JANS | |
| DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, AXIAL LEAD THROUGH-HOLE AND SURFACE MOUNT PACKAGES, 1N6620 THROUGH 1N6625, JAN, JANTX, JANTXV, AND JANS | |
| LIGHT EMITTING DIODE, RED, YELLOW, AND GREEN, THROUGH HOLE MOUNT PACKAGES, TYPES 1N6497, 1N6498, 1N6499, 1N6503, 1N6504, AND 1N6505, QUALITY LEVELS JAN AND JANTX | |
| LIGHT EMITTING DIODE, TYPES 1N6493, 1N6494, 1N6495, 1N6500, 1N6501, AND 1N6502, QUALITY LEVELS JAN AND JANTX | |
| SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7370 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N7370 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER, TYPE 2N7370, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7371 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7371 JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING TYPES 1N6493, 1N6494, 1N6495, 1N6500, 1N6501, AND 1N6502 JAN AND JANTX | |
| SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING TYPES 1N6497, 1N6498, 1N6499, 1N6503, 1N6504, AND 1N6505 JAN AND JANTX | |
| Semiconductor Device, Diode, Light Emitting Types 1N6497, 1N6498, 1N6499, 1N6503, 1N6504, and 1N6505, JAN and JANTX | |
| SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING, TYPES 1N6493, 1N6494, 1N6495, 1N6500, 1N6501, AND 1N6502, JAN AND JANTX | |
| SEMICONDUCTOR DEVICE, DIODE, LIGHT EMITTING, TYPES 1N6497, 1N6498, 1N6499, 1N6503, 1N6504, AND 1N6505, JAN AND JANTX | |
| SEMICONDUCTOR DEVICE, DIODE, SCHOTTKY POWER RECTIFIERS, TYPES 1N6849 - 1N6856, 1N6849U1 - 1N6856U1, 1N6849U2 - 1N6856U2, AND 1N6849U3 - 1N6856U3 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, AXIAL LEADED AND SURFACE MOUNT, TYPES 1N6512 THROUGH 1N6519 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6512 THROUGH 1N6519, 1N6512US THROUGH 1N6519US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6520 THROUGH 1N6527, 1N6520US THROUGH 1N6527US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER, FAST RECOVERY, TYPES 1N6520 THROUGH 1N6527, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6657 THROUGH 1N6659 AND 1N6657R THROUGH 1N6659R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, AXIAL LEAD, TYPES 1N6528 THROUGH 1N6535, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6520 THROUGH 1N6527, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE, TYPES 1N6528 THROUGH 1N6535 JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, High Voltage, Types 1N6528 through 1N6535, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRoUgh 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THROUGH 1N6666R JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Low Leakage, Types 1N6664 through 1N6666, and 1N6664R through 1N6666R JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA-FAST RECOVERY, TYPES 1N6688 AND 1N6689, QUALITY LEVELS JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST DUAL, COMMON CATHODE OR ANODE CENTER TAP, TYPES 1N6657 THROUGH 1N6659 QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST RECOVERY, DUAL (COMMON CATHODE OR COMMON ANODE, CENTER TAP), TYPES 1N6672 THROUGH 1N6674, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND... | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST RECOVERY, TYPES 1N6690 THROUGH 1N6693, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6686, 1N6687, 1N6686US, AND 1N6687US, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, 1N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6688, N6689, 1N6688US, AND 1N6689US, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Power Rectifier, Ultrafast, Types 1N6690 through 1N6693, 1N6690US through 1N6693US, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, TYPES 1N6690 THROUGH 1N6693, 1N669OUS THROUGH 1N6693US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, AND 1N6663US JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, DEVICE TYPES 1N6661, 1N6662, AND 1N6663, (THROUGH HOLE AND SURFACE MOUNT PACKAGES) QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817-1, 1N5819-1, AND 1N6761-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5822 AND 1N6864, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N6677-1 AND 1N6677UR-1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, AND 1N6663US JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, TYPES 1N6661, 1N6662, 1N6663, 1N6661US, 1N6662US, AND 1N6663US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817\x961, 1N5819\x961, AND 1N6761\x961, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY TYPE 1N6492, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, FAST RECOVERY, TYPE 1N6492, 1N6492U4, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6650-1, 1N6650UR-1, 1N6761-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANJ, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES lN5819-1,1N5819UR-l, 1N6650-1, AND 1N6650UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N5817\x961, 1N5817UR\x961, 1N5819\x961, 1N5819UR\x961, 1N6761\x961, AND 1N6761UR\x961, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, TYPES 1N6660, AND 1N6660R JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE, DOUBLER, TYPE 1N6660, CASE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, and 1N6660DT1, JAN, JANTX, JANTXV, and JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JAN, JANTX, JANTXV, JANJ, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N6683, 1N6684, 1N6685, 1N6683US, 1N6684US, AND 1N6685US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US JAN, JANTX, JANTXV, JANJ, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2, 1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N6642UBCC, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2, 1N6642UB2R, 1N6642UBCA, 1N6642UBD, 1N6642UBCC, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, 1N6638, 1N6642, 1N6643, 1N6638U, 1N6642U, 1N6643U, 1N6638US, 1N6642US, 1N6643US, 1N6642UB, 1N6642UB2, 1N6642UBR2, JAN, JANTX, JANTXV, JANJ, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, AXIAL LEADED AND SURFACE MOUNT PACKAGES, TYPES 1N6639, 1N6640, 1N6641, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, AXIAL LEADED AND SURFACE MOUNT PACKAGES, TYPES 1N6639, 1N6640, 1N6641, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6638, 1N6642, 1N6643, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6638, 1N6642, 1N6643, THROUGH HOLE, SURFACE MOUNT AND UNENCAPSULATED DIE, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, AND 1N6641US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6620 THROUGH 1N6625 AND U-SUFFIX VERSIONS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6620 THROUGH 1N6625 AND U-SUFFIX VERSIONS, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, HIGH VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6620 THROUGH 1N6625, 1N6620U THROUGH 1N6625U, 1N6620US THROUGH 1N6625US JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6620 THROUGH 1N6625, 1N6620U THROUGH 1N6625U, 1N6620US THROUGH 1N6625US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6688, 1N6689, 1N6688US, 1N6689US JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER, 1N6690 THROUGH 1N6693, 1N6690US THROUGH 1N6693US JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRA-FAST RECOVERY, POWER RECTIFIER,1N6690 THROUGH 1N6693, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, HIGH-VOLTAGE, POWER RECTIFIER 1N6626 THROUGH 1N6631 AND U SUFFIX VERSIONS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, HIGH-VOLTAGE, POWER RECTIFIER, 1N6626 THROUGH 1N6631, AND U SUFFIX VERSIONS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, 1N6626U THROUGH 1N6631U, 1N6626US THROUGH 1N6631US, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, 1N6626 THROUGH 1N6631, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, DIODE, SILICON, ULTRAFAST RECOVERY, POWER RECTIFIER, DEVICE TYPES 1N6626 THROUGH 1N6631, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT POWER TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 U AND U5 SUFFIXES, JANTXV, AND RADIATION HARDENED TYPE SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F,... | |
| Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistors, N-Channel Silicon Types 2N7399, 2N7400, 2N7401, and 2N7402, JANSD and JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON TYPES 2N7405, 2N7406, 2N7407, AND 2N7408 JANTXD, -R, JANTXVD, -R, AND JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398 JANTXD, -R, JANTXVD, -R, AND JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANTXD, -R, JANTXVD, -R, AND JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262, U AND U5 SUFFIXES, JANTXVR, F, G, AND H AND JANSR,... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M,... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON TYPES 2N7403 AND 2N7404 JANTXD, -R, JANTXVD, -R, AND JANSD, -R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R,... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS N-CHANNEL, SILICON TYPES 2N7272,2N7275,2N7278 , AND 2N7281 JANTXVM, D, R, AND JANSM, D AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE CHARACTERIZATION ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXVM, D, AND R, AND JANSM, D, AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7261 AND 2N7262 AND U SUFFIXES JANTXVR, F, G, AND H AND JANSR, F, G, AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7265, 2N7266, AND 2N7267 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G,... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVM, D, R, F, G, AND H; AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U JANTXVR, F, G, AND H; AND JANSR, F,... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7291, 2N7293, 2N7295, AND 2N7297 JANTXVM, D, R, AND JANSM, D AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON TYPES 2N7292, 2N7294, 2N7296, AND 2N7298 JANTXVM, D, R, H AND JANSM, D AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 AND U SUFFIXES, JANTXVR, F, G, AND H AND JANSR, F, G, AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7261 AND 2N7262 JANTXVM, D, R, F, G, AND H AND JANSM, D, R, F, G, AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, AND H; AND JANSR, F,... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7268, 2N7269, 2N7270, 2N7394, 2N7268U, 2N7269U, 2N7270U, AND 2N7394U, JANTXVR, F, G, H; JANSR, F, G, AND... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7291, 2N7293, 2N7295, AND 2N7297, JANTXVM, D, AND R, AND JANSM, D, AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY) TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV M, D, R, F, G, AND H, JANS M, D, R, F, G, AND H | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D AND R AND JANS M, D AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383 JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL SILICON, TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, N-CHANNEL, SILICON, TYPES 2N7380 AND 2N7381, JANTXV, M, D, R, F, G, AND H AND JANS, M, D, R, F, G, AND H... | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL SILICON, TYPES 2N7403 AND 2N7404, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED TRANSISTORS, P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901, AND 2N6903 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON TYPES 2N7229 AND 2N7230 JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JAN, JANTX, JANTXV, JANS, AND JANHC | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL AND P-CHANNEL, SILICON, TYPE 2N7337 JANTX, JANTXV, JANS, AND JANC | |
| Semiconductor Device, Field Effect Transistors, N-Channel and PChannel, Silicon, Type 2N7337 JAN, JANTX, JANTXV, JANS, and JANHC | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTORS, N-CHANNEL, SILICON TYPES 2N6966, 2N6967, 2N6968, AND 2N6969 JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390 JANTXV M, D AND R AND JANS M, D AND R | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, 2N7389U5, AND 2N7390U, 2N7390U5, JANTXV, R, AND F AND JANS, R, AND F | |
| SEMICONDUCTOR DEVICE, FIELD EFFECT, RADIATION HARDENED TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7389, 2N7390, 2N7389U, AND 2N7390U, JANTXV, R, AND F AND JANS, R, AND F | |
| Semiconductor Device, Filed Effect Radiation Hardened Total Dose and Single Event Effects) Transistors, N-Channel Silicon, Types 2N7395, 2N7396, 2N7397, and 2N7398, JANSD and JANSR | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N5822US JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N5822US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N5822US, 1N6864 AND 1N6864US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822 AND 1N5822US, 1N6864 AND 1N6864US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822, 1N5822US, 1N6864, 1N6864US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N5822, 1N6864, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6702 AND 1N6702US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N6677-1 AND 1N6677UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTOR, P-CHANNEL, AND N-CHANNEL, SILICON TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, QUAD, FIELD EFFECT TRANSISTORS, P-CHANNEL, SILICON TYPE 2N7335 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| Semiconductor Device, Repetitive Avalanche, Field Effect Transistor, N-Channel, Silicon Types 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, and 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U JANTX, JANTXV, JANS, JANHC AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, 2N7224U, 2N7225U, 2N7227U, AND 2N7228U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U, 2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, N-CHANNEL, SILICON, TYPES 2N7218, 2N7219, 2N72211 2N7222, 2N7218U, 2N7219U, 2N7221U, 2N7222U, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT, TRANSISTOR, P-CHANNEL, SILICON, TYPES 2N7236, 2N7237, 2N7236U, AND 2N7237U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), N-CHANNEL SILICON TYPES 2N7399, 2N7400, 2N7401, AND 2N7402 JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), N-CHANNEL SILICON TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, JANSD AND JANSR | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Transistor, Field Effect, N-Channel, Silicon Logic-Level, Types 2N6901 and 2N6903, JAN, JANTX, JANTXV, JANS, JANHC, and JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, JANS, JANHC,AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BI-POLAR, N-CHANNEL, SILICON, TYPES 2N7364, JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, INSULATED GATE, BI-POLAR, N-CHANNEL, SILICON, TYPES 2N7367 AND 2N7368, JAN, JANTX, JANTXV AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N4237, 2N4238 AND 2N4239 JAN, JANTX AND JANTXV | |
| Semiconductor Device, Transistor, NPN, Silicon Amplifier, Types 2N4237, 2N4238, and 2N4239, JAN, JANTX, and JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES 2N5681 AND 2N5682 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPE 2N7368 JAN, JANTX, JANTXV, AND JANS | |
| Semiconductor Device, Transistor, NPN, Silicon, High-Power Type 2N7368 JAN, JANTX, JANTXV,and JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER DARLINGTON TYPE 2N7370, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES 2N7374, 2N7375, 2N7376, AND 2N7377, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, JANS AND JANSD, F, G, H, L, M, P, AND R | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, JANS AND JANSM, D, P, L, R, F, G, AND H | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, NPN. SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP SILICON, SWITCHING TYPES 2N4209, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N665 | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N501A | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N4234, 2N4235 AND 2N4236 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N4234, 2N4235, AND 2N4236, JAN, JANTX, AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N5679 AND 2N5680 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N5679 AND 2N5680, JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES 2N5679 AND 2N5680 JAN, JANTX AND JANTXV | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER TYPE 2N7369 JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, HIGH-POWER, TYPE 2N7369, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, POWER, TYPE 2N7372, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4209, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N4209, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHC, JANHCM,... | |
| SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON TYPE 2N7334 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, TYPE 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, AND JANHCA2N7334 | |
| Semiconductor Device, Transistors, Quad, Field Effect, NChannel, Silicon, Type 2N7334, JAN, JANTX, JANTXV, JANS, JANHC, JANKCA2N7334, and JANHCA2N7334 | |
| SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, TYPE 2N7336, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICE, TRANSISTORS, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, TYPE 2N7335, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| SEMICONDUCTOR DEVICES, UNITIZED, DIODE, SILICON, POWER RECTIFIER, DUAL, COMMON CATHODE OR ANODE CENTER TAP, ULTRAFAST, TYPES 1N6672 THROUGH 1N6674 AND 1N6672R THROUGH 1N6674R, JAN, JANTX, JANTXV, AND JANS | |
| SEMICONDUCTOR DEVICES, UNITIZED, DIODE, SILICON, POWER RECTIFIER, ULTRAFAST, DUAL (COMMON CATHODE OR COMMON ANODE, CENTER TAP), TYPES 1N6672 THROUGH 1N6674, STANDARD AND REVERSE POLARITY, QUALITY LEVELS JAN, JANTX, JANTXV, AND... | |
| TRANSISTOR , FIELD EFFECT, RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7389 AND 2N7390, JANTXV, R, AND F AND JANS, R, AND F | |
| TRANSISTOR, DARLINGTON, PNP SILICON, HIGH-POWER TYPE 2N7371 JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, DARLINGTON, PNP SILICON, HIGH-POWER, DEVICE TYPE 2N7371, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND H | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE ONLY), N-CHANNEL, SILICON, (THROUGH-HOLE, SURFACE MOUNT, AND CARRIER BOARD PACKAGES), TYPES 2N7268, 2N7269, 2N7270, 2N7394, JANTXVR, F, G, H; JANSR, F, G, AND... | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED * ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED * ENCAPSULATED (THROUGH-HOLE PACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F... | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES) N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNTPACKAGE) P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7272, 2N7275, 2N7278, AND 2N7281, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED N-CHANNEL, SILICON, TYPES 2N7380, AND 2N7381, JANTXV AND JANS | |
| TRANSISTOR, FIELD EFFECT RADIATION HARDENED P-CHANNEL, SILICON, TYPES 2N7382 AND 2N7383, JANTXV M, D, R, AND F AND JANS M, D, R, AND F | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7395, 2N7396, 2N7397, AND 2N7398, QUALITY LEVELS JANSD AND JANSR | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL SILICON, RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS), TYPES 2N7399, 2N7400, 2N7401, AND 2N7402, FLANGE MOUNT PACKAGE, QUALITY LEVELS JANSD AND JANSR | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON LOGIC-LEVEL, TYPES 2N6901 AND 2N6903, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, CASE MOUNT THROUGH-HOLE MOUNT PACKAGE, TYPES 2N6966, 2N6967, 2N6968, 2N6969, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, REPETITIVE AVALANCHE, TYPES 2N7218, 2N7219, 2N7221, 2N7222, ENCAPSULATED (FLANGE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N6966, 2N6967, 2N6968, 2N6969, JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, FIELD EFFECT, P-CHANNEL SILICON, FLANGE MOUNT PACKAGE, RADIATION HARDENED (TOTAL DOSE ONLY), TYPES 2N7403 AND 2N7404, QUALITY LEVELS JANSD AND JANSR | |
| TRANSISTOR, FIELD EFFECT, RADIATION HARDENED (TOTAL DOSE ONLY) N-CHANNEL, SILICON, TYPES 2N7292, 2N7294, 2N7296, AND 2N7298, JANTXVM, D, R, H AND JANSM, D, R AND H | |
| TRANSISTOR, N-CHANNEL, FIELD EFFECT, POWER RADIATION HARDENED, SILICON, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), TYPES 2N7261 AND 2N7262, JANTXVR, F, G, AND H AND JANSR, F, G, AND H | |
| TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682, JAN, JANTX, AND JANTXV | |
| TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682, JAN, JANTX, JANTXV, AND JANKC | |
| TRANSISTOR, NPN, SILICON AMPLIFIER, TYPES 2N5681 AND 2N5682, JAN, JANTX, JANTXV, JANHC, AND JANKC | |
| TRANSISTOR, NPN, SILICON, AMPLIFIER, TYPES 2N4237, 2N4238, AND 2N4239, QUALITY LEVELS JAN, JANTX, AND JANTXV | |
| TRANSISTOR, NPN, SILICON, POWER DARLINGTON, TYPE 2N7370, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, JANS AND JANS, M, D, P, L, R, F, G, AND H | |
| TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, JANS AND JANSM, D, P, L, R, F, G, AND H | |
| TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N4234, 2N4235, AND 2N4236, JAN, JANTX, AND JANTXV | |
| TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N5679 AND 2N5680, JAN, JANTX AND JANTXV | |
| TRANSISTOR, PNP, SILICON AMPLIFIER, TYPES 2N5679 AND 2N5680, JAN, JANTX, JANTXV, JANHC AND JANKC | |
| TRANSISTOR, PNP, SILICON, AMPLIFIER, TYPES 2N4234, 2N4235, AND 2N4236, QUALITY LEVELS JAN, JANTX, AND JANTXV | |
| TRANSISTOR, PNP, SILICON, HIGH-POWER, DEVICE TYPE 2N7369, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, PNP, SILICON, POWER, THROUGH HOLE, TYPE 2N7372, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, QUAD, FIELD EFFECT, N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7334, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7336, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS | |
| TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N7335, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, N-CHANNEL, SILICON, TYPES 2N7224, 2N7225, 2N7227, 2N7228, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC | |
| TRANSISTOR, REPETITIVE AVALANCHE, FIELD EFFECT, P-CHANNEL, SILICON, TYPES 2N7236, AND 2N7237, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC |
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