Lansdale Semiconductor, Inc. Datasheets for DRAM and SDRAM Memory Chips

Dynamic random access memory (DRAM) chips are single-transistor memory cells that use small capacitors to store each bit of memory in an addressable format that consists of rows and columns. Because capacitors are unable to hold a charge indefinitely, DRAM memory chips require a near-constant pulse of current to retain stored information.
DRAM and SDRAM Memory Chips: Learn more

Product Name Notes
256-Bit TTL RAM (256x1) -- 54S301/E,F
64-Bit Random Access Memory (3-State) -- 54S189/E,F
The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.
2304-Bit TTL Bipolar RAM -- 82S212/W
256-Bit TTL Bipolar RAM -- 82LS16/E,F
256-Bit TTL Bipolar RAM -- 82S16/E,F
576-Bit TTL Bipolar RAM -- 82S09/Y
The 82S00 and 82LS00 series product lines consist of Schottky TTL products and Bipolar Memory products.
256-Bit TTL RAM (256x1) -- 54LS301/E,F The Series 54LS/74LS Schottky TTL family features both Schottky-barrier-diode inputs and emitter inputs and utilizes full Schottky-barrier-diode clamping to achieve speeds comparable to Series 54/74 at one-fifth of the power.
2048-Bit RAM -- 8X350/W These integrated circuits, which were originally manufactured by Signetics, fall under the broad category of Bipolar LSI.