Lansdale Semiconductor, Inc. 64-Bit Random Access Memory (3-State) 54S189/E,F

Description
The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.
Description
The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.

Suppliers

Company
Product
Description
Supplier Links
64-Bit Random Access Memory (3-State) - 54S189/E,F - Lansdale Semiconductor, Inc.
Phoenix, AZ, USA
64-Bit Random Access Memory (3-State)
54S189/E,F
64-Bit Random Access Memory (3-State) 54S189/E,F
The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.

The 54S00/74S00 series of product is fabricated with a non-saturating Schottky clamped transistor technique. This family of TTL product consists of very high performance and high power devices.

Technical Specifications

  Lansdale Semiconductor, Inc.
Product Category Memory Chips
Product Number 54S189/E,F
Product Name 64-Bit Random Access Memory (3-State)
Memory Category DRAM Chip
Logic Family TTL
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type DIP (optional feature); Lead Flat Pack
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - AS27C010A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details