The FGW30N120HD is a discrete IGBT designed for high-speed switching applications such as uninterruptible power supplies and power factor correction circuits. It is packaged in a TO-247-3 case and has a maximum collector-emitter voltage rating of 1200 V. The device supports a continuous collector current of 30 A at a case temperature of 100°C and 53 A at 25°C, with a pulsed collector current capability of 90 A. The collector-emitter saturation voltage is 1.83 V at 30 A and 25°C, and 2.34 V at 175°C. Maximum power dissipation is 260 W at 25°C. The operating junction temperature ranges from -40°C to 175°C, with a thermal resistance from junction to case of 0.568°C/W. The gate-emitter threshold voltage is 4.0 to 6.0 V, and the device includes a complementary fast recovery diode with a forward voltage drop of 1.28 V at 20 A and 25°C, and 2.08 V at 175°C.
IGBT, SINGLE, 1.2KV, 53A, TO-247-3; Continuous Collector Current:53A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:260W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:175°C; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 49X9258 |
| Product Name | Igbt, Single, 1.2Kv, 53A, To-247-3; Continuous Collector Current Fuji Electric |
| PD | 260000 milliwatts |