Manufacturer: Infineon Technologies
Win Source Part Number: 60666-IRFR12N25DPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 260 mOhm @ 8.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 75
MOSFET N-CH 250V 14A DPAK Product overview: IRFR12N25DPBF from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 14A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 14A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IRFR12N25DPBF can be used for catalog matching and distributor lookup.
N-Channel 250V 14A (Tc) 144W (Tc) Surface Mount D-Pak
MOSFET N-CH 250V 14A DPAK
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MOSFET N-CH 250V 14A DPAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Karl Kruse GmbH & Co. KG | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 60666-IRFR12N25DPBF | 278-IRFR12N25DPBF | IRFR12N25DPBF-ND | IRFR12N25DPBF | IRFR12N25DPBF | 376-IRFR12N25DPBF |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR12N25DPBF | 250V 14A DPAK MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 250V Single N-Channel HEXFET Power MOSFET in a D-P | MOSFET N-CH 250V 14A DPAK |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 250 volts | 250 volts | ||||
| PD | 144000 milliwatts | 144000 milliwatts | 144000 milliwatts | |||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | |||
| Package Type | SOT3; TO-252 (DPAK); D-Pak | Tube | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 |
