Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR12N25DPBF

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Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR12N25DPBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR12N25DPBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR12N25DPBF
MOSFET N-CH 250V 14A DPAK

MOSFET N-CH 250V 14A DPAK

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR12N25DPBF - 60666-IRFR12N25DPBF - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR12N25DPBF
60666-IRFR12N25DPBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR12N25DPBF 60666-IRFR12N25DPBF
Manufacturer: Infineon Technologies Win Source Part Number: 60666-IRFR12N25DPBF Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 144W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D-Pak Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 14A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 35nC @ 10V Max Input Capacitance: 810pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 260 mOhm @ 8.4A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited Quantity per package: 75

Manufacturer: Infineon Technologies
Win Source Part Number: 60666-IRFR12N25DPBF
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 144W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D-Pak
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 810pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 260 mOhm @ 8.4A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
Quantity per package: 75

Supplier's Site Datasheet
Single FETs, MOSFETs - IRFR12N25DPBF-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR12N25DPBF-ND
Single FETs, MOSFETs IRFR12N25DPBF-ND
N-Channel 250V 14A (Tc) 144W (Tc) Surface Mount D-Pak

N-Channel 250V 14A (Tc) 144W (Tc) Surface Mount D-Pak

Supplier's Site Datasheet
MOSFET N-CH 250V 14A DPAK - 376-IRFR12N25DPBF - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 250V 14A DPAK
376-IRFR12N25DPBF
MOSFET N-CH 250V 14A DPAK 376-IRFR12N25DPBF
MOSFET N-CH 250V 14A DPAK

MOSFET N-CH 250V 14A DPAK

Supplier's Site
250V Single N-Channel HEXFET Power MOSFET in a D-P - IRFR12N25DPBF - Karl Kruse GmbH & Co. KG
Kaarst, Germany
250V Single N-Channel HEXFET Power MOSFET in a D-P
IRFR12N25DPBF
250V Single N-Channel HEXFET Power MOSFET in a D-P IRFR12N25DPBF
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Win Source Electronics DigiKey Utmel Electronic Limited Karl Kruse GmbH & Co. KG
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET
Product Number IRFR12N25DPBF 60666-IRFR12N25DPBF IRFR12N25DPBF-ND 376-IRFR12N25DPBF IRFR12N25DPBF
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR12N25DPBF Single FETs, MOSFETs MOSFET N-CH 250V 14A DPAK 250V Single N-Channel HEXFET Power MOSFET in a D-P
Package Type TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Packing Method Tube; Tube Rail; Tube; Tube/Rail Tube; Tube
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
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