Texas Instruments CSD87312Q3E Dual 30-V N-Channel NexFET Power MOSFETs CSD87312Q3E

Dual 30-V N-Channel NexFET Power MOSFETs 8-VSON -55 to 150

Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)

Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)

Mosfet Array 2 N-Channel (Dual) Common Source 30V 27A 2.5W Surface Mount 8-VSON (3.3x3.3)

Power Field-Effect Transistor, 27A I(D), 30V, 0.038ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer: Texas Instruments
Win Source Part Number: 109658-CSD87312Q3E
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Source
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-VSON (3.3x3.3)
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 27A
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 8.2nC @ 4.5V
Max Input Capacitance: 1250pF @ 15V
Maximum Rds On at Id,Vgs: 33 mOhm @ 7A , 8V
Alternative Parts (Cross-Reference): AON2810; MP6K12TCR; CSD87312Q3E-ASY; CSD87312Q3E;
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 30V 27A 8VSON