ALD110808ASCL is a quad N-channel enhancement mode MOSFET array in a 16-pin SOIC package, designed for precision analog applications requiring matched pairs. The devices feature a gate threshold voltage of 0.80V with a match of ±2mV between pairs, a maximum drain-source voltage of 10.6V, and a power dissipation of 500mW. Input leakage current is specified at 30pA at 25°C, and the transconductance mismatch is 1.8%. The device operates from 0°C to +70°C and meets RoHS standards for lead-free construction. All MOSFETs are built on a single monolithic chip for excellent thermal tracking.
MOSFET Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 16-SOIC
Mosfet Array 4 N-Channel, Matched Pair 10.6V 12mA, 3mA 500mW Surface Mount 16-SOIC
MOSFET 4N-CH 10.6V 16SOIC
| Advanced Linear Devices, Inc. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | ALD110808ASCL | 1014-1025-ND | ALD110808ASCL |
| Product Name | QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® PRECISION MATCHED PAIR MOSFET ARRAY | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| MOSFET Operating Mode | Enhancement; Precision Enhancement Mode | ||
| V(BR)DSS | 10 volts | ||
| IDSS | 3 milliamps |
