The RSJ650N10 is an N-channel MOSFET designed for switching applications, featuring a 100 V drain-source voltage rating and a continuous drain current of 65 A. It is housed in a TO-263 (D2PAK) package with dimensions of 10.1 mm by 4.5 mm. The device supports 4 V gate drive and has a maximum on-resistance of 9.1 mΩ at V_GS = 10 V and 9.8 mΩ at V_GS = 4 V, both at 32.5 A. Power dissipation is rated at 100 W with a channel-to-case thermal resistance of 1.25 °C/W. The operating junction temperature range is -55 °C to 150 °C.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RSJ650N10 | RSJ650N10 |
| Product Name | Nch 100V 65A Power MOSFET | 4V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 100 volts | 100 volts |
| IDSS | 65000 milliamps | 65000 milliamps |
| QG | 260 nC | |
| PD | 100000 milliwatts | 100000 milliwatts |
