Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4202-S19-AY 2SK4202-S19-AY

The 2SK4202 is an N-channel power MOSFET designed for high current switching applications, housed in a TO-220 package weighing approximately 1.9 g. It has a drain-to-source voltage rating of 60 V, a continuous drain current of ±84 A at 25°C case temperature, and a maximum on-state resistance of 7.5 mΩ at 10 V gate-source voltage and 42 A drain current. The device supports a single avalanche current of 37 A and single avalanche energy of 137 mJ. Thermal resistance from channel to case is 1.20 °C/W. The part is rated for a channel temperature up to 150 °C and is qualified as "Standard" grade, suitable for industrial and consumer applications. The S19-AY suffix indicates pure tin plating and tube packaging, consistent with the base 2SK4202 specification.