Qorvo DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor QPD0060

Description
The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier. The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Description
The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier. The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Greensboro, NC, United States
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
QPD0060
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor QPD0060
The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier. The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

The QPD0060 is a wide band over-molded DFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor.
The QPD0060 can be used in Doherty architecture for the final stage of a base station amplifier for small cell, microcell, and active antenna systems. The QPD0060 can also be used as a driver in a macrocell base station power amplifier.
The wide bandwidth of the QPD0060 makes it suitable for many different applications from DC to 2.7 GHz. QPD0060 can deliver PSAT of 89.1 W at +48 V operation at 2.1 GHz.
Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number QPD0060
Product Name DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
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