Qorvo's UF3C065040K4S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
MOSFET 650V 42m? SiC Cascode Fast
N-Channel 650V 54A (Tc) 326W (Tc) Through Hole TO-247-4
MOSFET N-CH 650V 54A TO247-4
SIC SCHOTTKY DIODE, 650V, 54A, TO-247 ROHS COMPLIANT: YES
| Qorvo | VAST STOCK CO., LIMITED | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Transistors |
| Product Number | UF3C065040K4S | UF3C065040K4S | 2312-UF3C065040K4S-ND | UF3C065040K4S | 47AK1751 |
| Product Name | 650 V, 42 mohm SiC FET | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Schottky Diode, 650V, 54A, To-247 Rohs Compliant Unitedsic |
| Transistor Technology / Material | 650 V, 42 mohm SiC FET |
