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Qorvo's UF3C065080T3S 650 V, 80 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are available in a TO-220-3L package and are excellent for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive.
N-Channel 650V 31A (Tc) 190W (Tc) Through Hole TO-220-3
MOSFET 650V/80mOhm SiC FAST CASCODE G3 TO-220-3L REDUCED Rth
MOSFET N-CH 650V 31A TO220-3
SIC SCHOTTKY DIODE, 650V, 31A, TO-220 ROHS COMPLIANT: YES
| Qorvo | DigiKey | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors |
| Product Number | UF3C065080T3S | 2312-UF3C065080T3S-ND | UF3C065080T3S | UF3C065080T3S | 47AK1756 |
| Product Name | 650 V, 80 mohm SiC FET | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Sic Schottky Diode, 650V, 31A, To-220 Rohs Compliant Unitedsic |
| Transistor Technology / Material | 650 V, 80 mohm SiC FET |
