Nexperia B.V. 40 V low VCEsat PNP transistor PBSS5540Z/8F

Description
PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) MOSFET driver applications.
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Description
PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) MOSFET driver applications.
Request a Quote
Datasheet
Datasheet Summary
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PNP low VCEsat transistor in a SOT223 plastic package measuring 6.5 mm x 3.5 mm x 1.65 mm. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -5 A, and a peak collector current of -10 A. The collector-emitter saturation resistance is 55 to 80 mΩ at -2 A collector current and -200 mA base current. Total power dissipation is up to 1.35 W on a 1 cm² PCB copper pad and up to 2 W on a 6 cm² pad. The junction temperature ranges from -65 °C to 150 °C. NPN complement is PBSS4540Z.

Datasheet Summary
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PNP low VCEsat transistor in a SOT223 plastic package measuring 6.5 mm x 3.5 mm x 1.65 mm. It has a collector-emitter voltage rating of -40 V, a continuous collector current of -5 A, and a peak collector current of -10 A. The collector-emitter saturation resistance is 55 to 80 mΩ at -2 A collector current and -200 mA base current. Total power dissipation is up to 1.35 W on a 1 cm² PCB copper pad and up to 2 W on a 6 cm² pad. The junction temperature ranges from -65 °C to 150 °C. NPN complement is PBSS4540Z.

Suppliers

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40 V low VCEsat PNP transistor - PBSS5540Z/8F - Nexperia B.V.
Nijmegen, Netherlands
40 V low VCEsat PNP transistor
PBSS5540Z/8F
40 V low VCEsat PNP transistor PBSS5540Z/8F
PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4540Z Features and benefits Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation Applications Supply line switching circuits Battery management applications DC/DC converter applications Strobe flash units Heavy duty battery powered equipment (motor and lamp drivers) MOSFET driver applications.

PNP low VCEsat transistor in a SOT223 plastic package.

NPN complement: PBSS4540Z

Features and benefits

  • Low collector-emitter saturation voltage
  • High current capability
  • Improved device reliability due to reduced heat generation

Applications

  • Supply line switching circuits
  • Battery management applications
  • DC/DC converter applications
  • Strobe flash units
  • Heavy duty battery powered equipment (motor and lamp drivers)
  • MOSFET driver applications.
Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V.
Product Category Transistors
Product Number PBSS5540Z/8F
Product Name 40 V low VCEsat PNP transistor
Package Type SOT223; SOT223 SOT223
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